Photothermoelectric (PTE) detectors combine photothermal and thermoelectricconversion, surmounting material band gap restrictions and limitations related tomatching light wavelengths, have been widely used in telecomm...Photothermoelectric (PTE) detectors combine photothermal and thermoelectricconversion, surmounting material band gap restrictions and limitations related tomatching light wavelengths, have been widely used in telecommunication banddetection. Two-dimensional (2D) materials with gate-tunable Seebeck coefficientcan induce the generation of photothermal currents under illumination by theasymmetric Seebeck coefficient, making them promising candidate for PTE detectorsin the telecommunication band. In this work, we report that a newly exploredvan der Waals (vdW) layered material, SnP_(2)Se_(6), possessing excellent field regulationcapabilities and behaviors as an ideal candidate for PTE detector implementation.With the assistance of temperature-dependent Raman characterization, thesuspended atomic thin SnP_(2)Se_(6) nanosheets reveal thickness-dependent thermalconductivity of 1.4–5.7 W m^(-1) K^(-1) at room temperature. The 2D SnP_(2)Se_(6) demonstrateshigh Seebeck coefficient (S) and power factor (PF), which are estimated tobe -506 μV K^(-1) and 207 μWm^(-1) K^(-2), respectively. By effectively modulating theSnP_(2)Se_(6) localized carrier concentration, which in turn leads to inhomogeneousSeebeck coefficients, the designed dual-gate PTE detector with 2D SnP_(2)Se_(6) channeldemonstrates wide spectral photoresponse in telecommunication bands, yieldinghigh responsivity (R = 1.2 mA W^(-1)) and detectivity (D^(*) = 6× 10^(9) Jones)under 1550 nm light illumination. Our findings provide a new material platformand device configuration for the telecommunication band detection.展开更多
基金National Key Research and DevelopmentProgram of China, Grant/Award Number:2022YFA1203802National NaturalScience Foundation of China,Grant/Award Number: 52102161+1 种基金NaturalScience Foundation of GuangdongProvince, Grant/Award Number:2021A1515012423Shenzhen Science andTechnology Program, Grant/AwardNumbers: RCYX20221008092912045,RCJC20210706091950025。
文摘Photothermoelectric (PTE) detectors combine photothermal and thermoelectricconversion, surmounting material band gap restrictions and limitations related tomatching light wavelengths, have been widely used in telecommunication banddetection. Two-dimensional (2D) materials with gate-tunable Seebeck coefficientcan induce the generation of photothermal currents under illumination by theasymmetric Seebeck coefficient, making them promising candidate for PTE detectorsin the telecommunication band. In this work, we report that a newly exploredvan der Waals (vdW) layered material, SnP_(2)Se_(6), possessing excellent field regulationcapabilities and behaviors as an ideal candidate for PTE detector implementation.With the assistance of temperature-dependent Raman characterization, thesuspended atomic thin SnP_(2)Se_(6) nanosheets reveal thickness-dependent thermalconductivity of 1.4–5.7 W m^(-1) K^(-1) at room temperature. The 2D SnP_(2)Se_(6) demonstrateshigh Seebeck coefficient (S) and power factor (PF), which are estimated tobe -506 μV K^(-1) and 207 μWm^(-1) K^(-2), respectively. By effectively modulating theSnP_(2)Se_(6) localized carrier concentration, which in turn leads to inhomogeneousSeebeck coefficients, the designed dual-gate PTE detector with 2D SnP_(2)Se_(6) channeldemonstrates wide spectral photoresponse in telecommunication bands, yieldinghigh responsivity (R = 1.2 mA W^(-1)) and detectivity (D^(*) = 6× 10^(9) Jones)under 1550 nm light illumination. Our findings provide a new material platformand device configuration for the telecommunication band detection.
