Direct synthesis of CdS nanoclusters within the pore structure of Y zeolite was made.The location of CdS nanoclusters inside Y zeolite hosts was confirmed by the blue-shifted reflection absorption spectra with respect...Direct synthesis of CdS nanoclusters within the pore structure of Y zeolite was made.The location of CdS nanoclusters inside Y zeolite hosts was confirmed by the blue-shifted reflection absorption spectra with respected to that of bulk CdS materials.In this paper,we conducted Positron Annihilation Lifetime Spectrum(PALS)measurements on a series of CdS/Y zeolite samples and concluded that CdS clusters were not located in supercages but in smaller sodalite cages;as the CdS loading concentration increases to 5 wt%,the discrete CdS cubes begin to form bigger superclusters through interaction.The stability of CdS clusters inside the sodalite units is due to the coordination of Cd atoms with the framework oxygen atoms of the double six-ring windows.Moreover,PALS reveals some important information of surface states existing on the interfacial layers between CdS clusters and Y zeolite.展开更多
Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes （SBDs）. Based on the measured...Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes （SBDs）. Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts （Rs） was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AIGaN/AIN/GaN SBDs and the AlGaN/AlN/GaN HFETs.展开更多
基金Supported by the National Natural science Foundation of China(19871074)
文摘Direct synthesis of CdS nanoclusters within the pore structure of Y zeolite was made.The location of CdS nanoclusters inside Y zeolite hosts was confirmed by the blue-shifted reflection absorption spectra with respected to that of bulk CdS materials.In this paper,we conducted Positron Annihilation Lifetime Spectrum(PALS)measurements on a series of CdS/Y zeolite samples and concluded that CdS clusters were not located in supercages but in smaller sodalite cages;as the CdS loading concentration increases to 5 wt%,the discrete CdS cubes begin to form bigger superclusters through interaction.The stability of CdS clusters inside the sodalite units is due to the coordination of Cd atoms with the framework oxygen atoms of the double six-ring windows.Moreover,PALS reveals some important information of surface states existing on the interfacial layers between CdS clusters and Y zeolite.
基金Project supported by the National Natural Science Foundation of China(Grant No.10774090)the National Basic Research Program of China(Grant No.2007CB936602)
文摘Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors （HFETs） were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/CaN Schottky barrier diodes （SBDs）. Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts （Rs） was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AIGaN/AIN/GaN SBDs and the AlGaN/AlN/GaN HFETs.
