The application of a p~＋/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-ID program.The differences between p~＋-p-i-n configura...The application of a p~＋/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-ID program.The differences between p~＋-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed out.The effects of dopant concentration, thickness of p~＋-layer,contact barrier height and defect density on solar cells are analyzed.Our results indicate that solar cells with a p~＋-p-i-n configuration have a better performance.The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p~＋ layer and lowering the front contact barrier height.The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.展开更多
基金supported by the Key Programs for Science and Technology Development of Jiangsu,China(Nos.BE20080030,BE2009028)the Qing Lan Project,China(No.2008-04)the Jiangsu"333"Project,China(No.201041)
文摘The application of a p~＋/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-ID program.The differences between p~＋-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed out.The effects of dopant concentration, thickness of p~＋-layer,contact barrier height and defect density on solar cells are analyzed.Our results indicate that solar cells with a p~＋-p-i-n configuration have a better performance.The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p~＋ layer and lowering the front contact barrier height.The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.
