Molybdenum disulfide(MoS_(2))is a widely used optoelectronic material with exceptional electrical,magnetic,optical,and mechanical properties.Due to the quantum confinement effect,high absorption coefficient,high surfa...Molybdenum disulfide(MoS_(2))is a widely used optoelectronic material with exceptional electrical,magnetic,optical,and mechanical properties.Due to the quantum confinement effect,high absorption coefficient,high surface-volume ratio,and tunable bandgap,nanoMoS_(2)-based devices exhibit size-dependent and novel optoelectronic properties,such as excellent photoluminescence and high anisotropic electrical,mechanical,and thermal properties.This review focuses mainly on the latest progress of optoelectronic device applications based on two-dimensional(2D)nano-MoS_(2).Various advanced devices,such as sensors,photodetectors,light-emitting diodes(LEDs),memory applications,and field-effect transistors(FETs)are considered.The review will provide a new perspective in promoting the development of 2D nanomaterial-based photoelectric applications.展开更多
Two-dimensional(2D)semiconductor molybdenum disulfide(MoS_(2))can be used as n-channel and is considered as a key candidate material to advance the promising development of optoelectronic device.The high thermal condu...Two-dimensional(2D)semiconductor molybdenum disulfide(MoS_(2))can be used as n-channel and is considered as a key candidate material to advance the promising development of optoelectronic device.The high thermal conductivity,breakdown voltage,carrier mobility,and high saturation velocity of diamond offer the possibility of making it high-frequency device material in hightemperature and high-power fields.The addition of 2D MoS_(2)nanolayers and nanosheets to diamond thin film to form heterojunction can improve the carrier transport performance of the optoelectronic device in harsh environments.In this perspective,the prospects of 2D MoS_(2)/diamond heterojunction for challenges and new designs of optoelectronic applications are discussed,including photodetectors,memories,transistors,light emission diodes,and electron field emission devices to further explore the development of 2D material device field in complex environments.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.62104090 and 11604133)the Natural Science Foundation of Shandong Province(No.ZR2017QA013)+5 种基金the Introduction and Cultivation Plan of Youth Innovation Talents for Universities of Shandong Provincethe Science and Technology Plan of Youth Innovation Team for Universities of Shandong Province(No.2019KJJ019)the Open Project of State Key Laboratory of Superhard Materials(Jilin University,Nos.201503 and 201612)the Fundamental Research Funds for the Central Universities(buctrc 202122)the Research Funding of Liaocheng University(Nos.318012016,318051610,318052136 and 318051612)the Special Construction Project Fund for Shandong Province Taishan Scholars。
文摘Molybdenum disulfide(MoS_(2))is a widely used optoelectronic material with exceptional electrical,magnetic,optical,and mechanical properties.Due to the quantum confinement effect,high absorption coefficient,high surface-volume ratio,and tunable bandgap,nanoMoS_(2)-based devices exhibit size-dependent and novel optoelectronic properties,such as excellent photoluminescence and high anisotropic electrical,mechanical,and thermal properties.This review focuses mainly on the latest progress of optoelectronic device applications based on two-dimensional(2D)nano-MoS_(2).Various advanced devices,such as sensors,photodetectors,light-emitting diodes(LEDs),memory applications,and field-effect transistors(FETs)are considered.The review will provide a new perspective in promoting the development of 2D nanomaterial-based photoelectric applications.
基金financially supported by the National Natural Science Foundation of China(Nos.62104090,11604133 and 62205011)the Natural Science Foundation of Shandong Province(No.ZR2017QA013)+6 种基金the Science and Technology Plan of Youth Innovation Team for Universities of Shandong Province(No.2019KJJ019)the Open Project of State Key Laboratory of Superhard Materials,Jilin University(Nos.201503 and 201612)the Fundamental Research Funds for the Central Universities(No.buctrc 202122)the Research Funding of Liaocheng University(Nos.318012016,318051610,318052136 and 318051612)the Open Research Project of Zhejiang province Key Laboratory of Quantum Technology and Device(No.20220401)the Open Research Project of Special Display and Imaging Technology Innovation Center of Anhui Province(No.2022AJ05001)the Special Construction Project Fund for Shandong Province Taishan Scholars。
文摘Two-dimensional(2D)semiconductor molybdenum disulfide(MoS_(2))can be used as n-channel and is considered as a key candidate material to advance the promising development of optoelectronic device.The high thermal conductivity,breakdown voltage,carrier mobility,and high saturation velocity of diamond offer the possibility of making it high-frequency device material in hightemperature and high-power fields.The addition of 2D MoS_(2)nanolayers and nanosheets to diamond thin film to form heterojunction can improve the carrier transport performance of the optoelectronic device in harsh environments.In this perspective,the prospects of 2D MoS_(2)/diamond heterojunction for challenges and new designs of optoelectronic applications are discussed,including photodetectors,memories,transistors,light emission diodes,and electron field emission devices to further explore the development of 2D material device field in complex environments.
