Advancing complementary metal–oxide–semiconductor(CMOS)technology into the sub-1-nmÅngström-scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounte...Advancing complementary metal–oxide–semiconductor(CMOS)technology into the sub-1-nmÅngström-scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm.Two-dimensional(2D)semiconductors have emerged as strong candidates for overcoming the short-channel effects due to their atomically thin bodies that significantly improves the gate control in aggressively scaled field-effect transistors(FETs).Among the growing library of 2D materials;MA_(2)Z_(4)family has attracted increasing attention for its remarkable ambient stability;suitable bandgaps;and favorable carrier transport characteristics.While experimental realization of sub-10-nm 2D FETs remains technologically demanding;computational device simulations using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for assessing the performance limits and optimal design of ultrascaled FET.This review consolidates the current progress in the computational design of MA_(2)Z_(4)family FETs.We review the physical properties of MoSi_(2)N_(4)that makes them compelling candidates for transistor applications;and the simulated device performance and optimization strategy of MA_(2)Z_(4)family FETs.Finally;we discuss the key challenges and research gaps;as well as the future directions of MA_(2)Z_(4)family FET research toward theÅngström-scale CMOS era.展开更多
基金Singapore National Research Foundation(NRF)Frontier Competitive Research Programme(F-CRP),Grant/Award Number:NRF-F-CRP-2024-0001KwanIm Thong Hood Cho Temple Early Career Chair Professorship in Sustainability+3 种基金National Natural Science Foundation of China,Grant/Award Numbers:12447116,91964101,12274002Ministry of Science and Technology of China,Grant/Award Number:2022YFA1203904Singapore A*STAR IRG,Grant/Award Number:M23M6c0102Singapore Ministry of Education,Grant/Award Number:22-SISSMU-054。
文摘Advancing complementary metal–oxide–semiconductor(CMOS)technology into the sub-1-nmÅngström-scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm.Two-dimensional(2D)semiconductors have emerged as strong candidates for overcoming the short-channel effects due to their atomically thin bodies that significantly improves the gate control in aggressively scaled field-effect transistors(FETs).Among the growing library of 2D materials;MA_(2)Z_(4)family has attracted increasing attention for its remarkable ambient stability;suitable bandgaps;and favorable carrier transport characteristics.While experimental realization of sub-10-nm 2D FETs remains technologically demanding;computational device simulations using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for assessing the performance limits and optimal design of ultrascaled FET.This review consolidates the current progress in the computational design of MA_(2)Z_(4)family FETs.We review the physical properties of MoSi_(2)N_(4)that makes them compelling candidates for transistor applications;and the simulated device performance and optimization strategy of MA_(2)Z_(4)family FETs.Finally;we discuss the key challenges and research gaps;as well as the future directions of MA_(2)Z_(4)family FET research toward theÅngström-scale CMOS era.
