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Two-dimensional molecular crystalline semiconductors towards advanced organic optoelectronics 被引量:1
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作者 Xuemei Dong Heshan Zhang +7 位作者 Yinxiang Li Bin Liu keyuan pan Yijie Nie Mengna Yu Mustafa Eginligil Juqing Liu Wei Huang 《Nano Research》 SCIE EI CSCD 2022年第10期9554-9572,共19页
The compelling demand for higher performance and lower cost in the optoelectronics industry has driven the development of organic semiconductors.Molecular crystalline semiconductors(MCSs),especially two-dimensional MC... The compelling demand for higher performance and lower cost in the optoelectronics industry has driven the development of organic semiconductors.Molecular crystalline semiconductors(MCSs),especially two-dimensional MCSs(2D-MCSs),possess intrinsic ordered structure,quantum confinement effect,high mobility,unique optical and electrical properties,and more ecological and cheaper production,which make great promises in high-performance optoelectronic applications.Here we provide a review of design principles and synthetic strategies for 2D-MCS materials,exploiting their potential as a revolution option in associated optoelectronic devices.The merits and limitations of each strategy are presented,and these molecular crystals are considered as a competitive choice for emerging semiconducting materials in information science.Finally,the current challenges and future perspectives in this field are also elaborated. 展开更多
关键词 two-dimensional molecular crystalline semiconductors(2D-MCSs) molecular design strategies preparation techniques photoelectronic applications
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A memristive-photoconductive transduction methodology for accurately nondestructive memory readout
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作者 Zhe Zhou Yueyue Wu +9 位作者 keyuan pan Duoyi Zhu Zifan Li Shiqi Yan Qian Xin Qiye Wang Xinkai Qian Fei Xiu Wei Huang Juqing Liu 《Light: Science & Applications》 SCIE EI CSCD 2024年第9期1801-1808,共8页
Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing,accurate retrieval of the stored information is a prerequisite during read operation.However,conventional electrical read... Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing,accurate retrieval of the stored information is a prerequisite during read operation.However,conventional electrical readout normally suffer from complicated process,inaccurate and destructive reading due to crosstalk effect from sneak path current.Here we report a memristive-photoconductive transduction(MPT)methodology for precise and nondestructive readout in a memristive crossbar array.The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation,which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli.This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell,and a prototype 4*4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process. 展开更多
关键词 CROSSTALK PRECISE enable
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