Copper indium sulfur-based quantum dots(CIS QDs)are classified as one of well-known ternaryⅠ-Ⅲ-Ⅵsemiconductors,which have exciting promising applications in display and lighting devices,due to their unique merits s...Copper indium sulfur-based quantum dots(CIS QDs)are classified as one of well-known ternaryⅠ-Ⅲ-Ⅵsemiconductors,which have exciting promising applications in display and lighting devices,due to their unique merits such as non-toxicity,stability,and high photoluminescence quantum yield(PL QY).However,the emission full width at half maximum(FWHM)of CIS-based QDs typically extends to~140 nm,fundamentally limiting their use in high-color-purity light emitting.Herein,we report the rationally-designed CIS QDs with high efficiency and narrowband emission by chemical stoichiometry and gradient shell engineering,based on precisely controlling the dynamic growth and stoichiometric ratio.It is found that the accurate control on the growth kinetics and stoichiometry during the nucleation process of CIS QDs could enhance the crystallinity through gradual and organized crystalline growth,which effectively mitigates the formation of InCusubstitutional and Cu vacancies,thus suppressing the defect emission.Furthermore,the introduced InSx/ZnxGa_(1-x)S gradient shell on the surface of QDs cores could reduce the strain within interface,thereby eliminating the non-radiative recombination caused by the surface defects resulted from interface strain.As a result,a remarkable PLQY of 89%is achieved for the QDs.More importantly,their FWHM decreases to 70 nm,which is the narrowest one for CIS-based QDs ever reported,representing their bright future to be applied in high-definition display devices.展开更多
基金supported by“Science and Technology Innovation 2025”of Ningbo Foundation(No.2020Z061)the general scientific research project of the Department of Education of Zhejiang Province(Nos.Y202147973 and Y202250313)+2 种基金Scientific Research Project Funded by Ningbo University of Technology(Nos.2022KQ11 and 2022TS26)National Natural Science Foundation of China(No.62165001)the special fund for“Guangxi Bagui Scholars”。
文摘Copper indium sulfur-based quantum dots(CIS QDs)are classified as one of well-known ternaryⅠ-Ⅲ-Ⅵsemiconductors,which have exciting promising applications in display and lighting devices,due to their unique merits such as non-toxicity,stability,and high photoluminescence quantum yield(PL QY).However,the emission full width at half maximum(FWHM)of CIS-based QDs typically extends to~140 nm,fundamentally limiting their use in high-color-purity light emitting.Herein,we report the rationally-designed CIS QDs with high efficiency and narrowband emission by chemical stoichiometry and gradient shell engineering,based on precisely controlling the dynamic growth and stoichiometric ratio.It is found that the accurate control on the growth kinetics and stoichiometry during the nucleation process of CIS QDs could enhance the crystallinity through gradual and organized crystalline growth,which effectively mitigates the formation of InCusubstitutional and Cu vacancies,thus suppressing the defect emission.Furthermore,the introduced InSx/ZnxGa_(1-x)S gradient shell on the surface of QDs cores could reduce the strain within interface,thereby eliminating the non-radiative recombination caused by the surface defects resulted from interface strain.As a result,a remarkable PLQY of 89%is achieved for the QDs.More importantly,their FWHM decreases to 70 nm,which is the narrowest one for CIS-based QDs ever reported,representing their bright future to be applied in high-definition display devices.
