Room temperature sputtered inorganic nickel oxide(NiO_(x))is one of the most promising hole transport layers(HTL)for perovskite-sillion 2-terminal tandem solar cells with the aid of ultrathin and compact organic layer...Room temperature sputtered inorganic nickel oxide(NiO_(x))is one of the most promising hole transport layers(HTL)for perovskite-sillion 2-terminal tandem solar cells with the aid of ultrathin and compact organic layers to passivate the surface defects.In this study,the aromatic solvent with different substituent groups was used to regulate the conformation of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)am ine](PTAA)layer.As a result,the single-junction perovskite solar cell(PSC)gained a power conversion efficiency(PCE)of 20.63%,contributing to a 27.21%efficiency for monolithic perovskite/silicon(double-side polished)2-terminal tandem solar cell,by applying the alkyl aromatic solvent to enhance theπ-πstacking of PTAA molecular chains.The tandem solar cell can maintain 95%initial efficiency after aging over 1000 h.This study provides a universal approach for improving the photovoltaic performance of NiO_(x)/polymer-based perovskite/silicon tandem solar cells and other single junction inverted PSCs.展开更多
Tunnel oxide passivated contact solar cells have evolved into one of the most promising silicon solar cell concepts of the past decade,achieving a record efficiency of 25%.We study the transport mechanisms of realisti...Tunnel oxide passivated contact solar cells have evolved into one of the most promising silicon solar cell concepts of the past decade,achieving a record efficiency of 25%.We study the transport mechanisms of realistic tunnel oxide structures,as encountered in tunnel oxide passivating contact(TOPCon) solar cells.Tunneling transport is affected by various factors,including oxide layer thickness,hydrogen passivation,and oxygen vacancies.When the thickness of the tunnel oxide layer increases,a faster decline of conductivity is obtained computationally than that observed experimentally.Direct tunneling seems not to explain the transport characteristics of tunnel oxide contacts.Indeed,it can be shown that recombination of multiple oxygen defects in a-SiOx can generate atomic silicon nanowires in the tunnel layer.Accordingly,new and energetically favorable transmission channels are generated,which dramatically increase the total current,and could provide an explanation for our experimental results.Our work proves that hydrogenated silicon oxide(SiOx:H) facilitates high-quality passivation,and features good electrical conductivity,making it a promising hydrogenation material for TOPCon solar cells.By carefully selecting the experimental conditions for tuning the SiOx:H layer,we anticipate the simultaneous achievement of high open-circuit voltage and low contact resistance.展开更多
Carbon nitride(CN)has attracted intensive attention as a visible light photocatalyst,but the rapid recombination of photogenerated charge carriers limits its photocatalytic activity.Herein,we develop a new strategy to...Carbon nitride(CN)has attracted intensive attention as a visible light photocatalyst,but the rapid recombination of photogenerated charge carriers limits its photocatalytic activity.Herein,we develop a new strategy to construct both homojunction and ohmic junction into CN via selectively introducing metallized CN(MCN),which leads to rapid separation and transfer of photogenerated charge carriers.The polymerization of urea in the presence of KOH creates CN homojunction with amino and cyano groups.The subsequent molten salt treatment induces a new type of cyano-terminated CN that can be converted to MCN through photodoping,forming homojunction and ohmic contact coexisting CN(HOCN).The formed HOCN photocatalyst exhibits a high photocatalytic H_(2)evolution rate of 18.5 mmol·g^(-1)·h^(-1)under visible light irradiation,45-fold higher than that of bulk CN.This strategy provides a new idea for designing ohmic contact between semiconductor and metal,and realizing efficient photocatalysis by improving charge separation and transfer.展开更多
基金supported by the National Key R&D Program of China(2018YFB1500103)the National Natural Science Foundation of China(62104082)+1 种基金the Guangdong Basic and Applied Basic Research Foundation(2022A1515010746,2022A1515011228)the Science and Technology Program of Guangzhou(202201010458)。
文摘Room temperature sputtered inorganic nickel oxide(NiO_(x))is one of the most promising hole transport layers(HTL)for perovskite-sillion 2-terminal tandem solar cells with the aid of ultrathin and compact organic layers to passivate the surface defects.In this study,the aromatic solvent with different substituent groups was used to regulate the conformation of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)am ine](PTAA)layer.As a result,the single-junction perovskite solar cell(PSC)gained a power conversion efficiency(PCE)of 20.63%,contributing to a 27.21%efficiency for monolithic perovskite/silicon(double-side polished)2-terminal tandem solar cell,by applying the alkyl aromatic solvent to enhance theπ-πstacking of PTAA molecular chains.The tandem solar cell can maintain 95%initial efficiency after aging over 1000 h.This study provides a universal approach for improving the photovoltaic performance of NiO_(x)/polymer-based perovskite/silicon tandem solar cells and other single junction inverted PSCs.
基金Supported by the National Natural Science Foundation of China(Grant Nos.61704083 and 61874060)the Natural Science Foundation of Jiangsu Province(Grant No.BK20181388)NUPTSF(Grant No.NY219030)。
文摘Tunnel oxide passivated contact solar cells have evolved into one of the most promising silicon solar cell concepts of the past decade,achieving a record efficiency of 25%.We study the transport mechanisms of realistic tunnel oxide structures,as encountered in tunnel oxide passivating contact(TOPCon) solar cells.Tunneling transport is affected by various factors,including oxide layer thickness,hydrogen passivation,and oxygen vacancies.When the thickness of the tunnel oxide layer increases,a faster decline of conductivity is obtained computationally than that observed experimentally.Direct tunneling seems not to explain the transport characteristics of tunnel oxide contacts.Indeed,it can be shown that recombination of multiple oxygen defects in a-SiOx can generate atomic silicon nanowires in the tunnel layer.Accordingly,new and energetically favorable transmission channels are generated,which dramatically increase the total current,and could provide an explanation for our experimental results.Our work proves that hydrogenated silicon oxide(SiOx:H) facilitates high-quality passivation,and features good electrical conductivity,making it a promising hydrogenation material for TOPCon solar cells.By carefully selecting the experimental conditions for tuning the SiOx:H layer,we anticipate the simultaneous achievement of high open-circuit voltage and low contact resistance.
基金We thank the Recruitment Program of Global Experts,the National Natural Science Foundation of China(Nos.62175033 and 61775040)the Hundred-Talent Project of Fujian,Fujian Science&Technology Innovation Laboratory for Optoelectronic Information(No.2021ZZ126)+2 种基金Stiftelsen Olle Engkvist Byggmastare(No.SOEB-2015/167)Swedish Energy Agency(No.46641-1)The Key Laboratory for Ultrafine Materials of The Ministry of Education at East China University of Science and Technology for the financial support.
文摘Carbon nitride(CN)has attracted intensive attention as a visible light photocatalyst,but the rapid recombination of photogenerated charge carriers limits its photocatalytic activity.Herein,we develop a new strategy to construct both homojunction and ohmic junction into CN via selectively introducing metallized CN(MCN),which leads to rapid separation and transfer of photogenerated charge carriers.The polymerization of urea in the presence of KOH creates CN homojunction with amino and cyano groups.The subsequent molten salt treatment induces a new type of cyano-terminated CN that can be converted to MCN through photodoping,forming homojunction and ohmic contact coexisting CN(HOCN).The formed HOCN photocatalyst exhibits a high photocatalytic H_(2)evolution rate of 18.5 mmol·g^(-1)·h^(-1)under visible light irradiation,45-fold higher than that of bulk CN.This strategy provides a new idea for designing ohmic contact between semiconductor and metal,and realizing efficient photocatalysis by improving charge separation and transfer.
