In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annea...In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annealing temperatures (298, 323, 348, 373, 423 K) respectively. The structure and surface morphology of CuPc in powder and thin films forms prepared by two methods were studied using Energy dispersive X-ray (EDX), X-ray f§lt;span§gt;lorescence (XRF), X-ray§lt;/span§gt;diffraction (XRD), Atomic force microscope (AFM), and Scanning electron microscope (SEM). It showed that there was a change and enhancement in the crystallinity and surface morphology due to change in the annealing temperature (T§lt;sub§gt;a§lt;/sub§gt;). The purpose of our work is to find the optimal temperature for which the film produces best structural properties for CuPc thin film to produce organic field effect transistor. Analysis of X-ray diffraction patterns of CuPc in powder form showed that it had an α-poly-crystalline phase with monoclinic structure, with preferentially oriented (100) plane transform to §lt;i§gt;β§lt;/i§gt;-single crystalline morestable structure at different annealing temperatures.展开更多
A spectroscopic study on laser-produced tin plasma utilizing the optical emission spectroscopy （OES） technique is presented. Plasma is produced from a solid tin target irradiated with pulsed laser in room environmen...A spectroscopic study on laser-produced tin plasma utilizing the optical emission spectroscopy （OES） technique is presented. Plasma is produced from a solid tin target irradiated with pulsed laser in room environment. Electron temperature is determined at different laser peak powers from the ratio of line intensities, while electron density is deduced from Saha-Boltzmann equation. A limited number of suitable tin lines are detected, and the effect of the laser peak power on the intensity of emission lines is discussed. Electron temperatures are measured in the range of 0.36eV-0.44eV with electron densities of the order 1017cm-3 as the laser peak power is varied from 11 MW to 22 MW.展开更多
文摘In the present paper, Copper Phthalocyanine (CuPc) thin films were deposited on glass and silicon substrate by thermal evaporation and pulsed laser deposition (PLD) methods. CuPc thin films prepared at different annealing temperatures (298, 323, 348, 373, 423 K) respectively. The structure and surface morphology of CuPc in powder and thin films forms prepared by two methods were studied using Energy dispersive X-ray (EDX), X-ray f§lt;span§gt;lorescence (XRF), X-ray§lt;/span§gt;diffraction (XRD), Atomic force microscope (AFM), and Scanning electron microscope (SEM). It showed that there was a change and enhancement in the crystallinity and surface morphology due to change in the annealing temperature (T§lt;sub§gt;a§lt;/sub§gt;). The purpose of our work is to find the optimal temperature for which the film produces best structural properties for CuPc thin film to produce organic field effect transistor. Analysis of X-ray diffraction patterns of CuPc in powder form showed that it had an α-poly-crystalline phase with monoclinic structure, with preferentially oriented (100) plane transform to §lt;i§gt;β§lt;/i§gt;-single crystalline morestable structure at different annealing temperatures.
文摘A spectroscopic study on laser-produced tin plasma utilizing the optical emission spectroscopy （OES） technique is presented. Plasma is produced from a solid tin target irradiated with pulsed laser in room environment. Electron temperature is determined at different laser peak powers from the ratio of line intensities, while electron density is deduced from Saha-Boltzmann equation. A limited number of suitable tin lines are detected, and the effect of the laser peak power on the intensity of emission lines is discussed. Electron temperatures are measured in the range of 0.36eV-0.44eV with electron densities of the order 1017cm-3 as the laser peak power is varied from 11 MW to 22 MW.
