High-performance infrared emitters hold substantial importance in modern engineering and physics.Here,we introduce graphene/PZT(lead zirconate titanate)heterostructure as a new platform for the development of infrared...High-performance infrared emitters hold substantial importance in modern engineering and physics.Here,we introduce graphene/PZT(lead zirconate titanate)heterostructure as a new platform for the development of infrared source structure based on an electron-phonon coupling and emitting mechanism.A series of electrical characterizations including carrier mobility[11,361.55 cm^(2)/(V.s)],pulse current(30 ms response time),and cycling stability(2000 cycles)modulated by polarized film was provided.展开更多
Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors,which have great potential in the applications of next-generation integrate...Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors,which have great potential in the applications of next-generation integrated circuit and optoelectronic devices.Hence,a controlled and facile method to achieve p-n interface is desired.Molybdenum sulfide(MoS2)has shown promising potential as an atomic-layer ntype semiconductor in electronics and optoelectronics.Here,we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization process.The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior,with a maximum external quantum efficiency of^650%,~3.6 mA W-1 at 0 V,and a light switching ratio of^102.The importance of the built-in p-n junction with such a high performance is further confirmed by high-resolution photocurrent mapping.Due to the high photoresponse at low source-drain voltage(VDS)and gate voltage(VG),the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic circuits.Our findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics,optoelectronics and CMOS logic circuits.展开更多
Reliable fabrication of multiscale metallic patterns with precise geometry and size at both the nanoscale and macroscale is of importance for various applications in electronic and optical devices.The existing fabrica...Reliable fabrication of multiscale metallic patterns with precise geometry and size at both the nanoscale and macroscale is of importance for various applications in electronic and optical devices.The existing fabrication processes,which usually involve film deposition in combination with electron-beam patterning,are either timeconsuming or offer limited precision.Inspired by the kirigami,an ancient handicraft art of paper cutting,this work demonstrates an electron-beam patterning process for multiscale metallic structures with significantly enhanced efficiency and precision.Similar to the kirigami,in which the final pattern is defined by cutting its contour in a paper and then removing the unwanted parts,we define the target multiscale structures by first creating nanotrench contours in a metallic film via an electron-beam-based process and then selectively peeling the separated film outside the contours.Compared with the conventional approach,which requires the exposure of the whole pattern,much less exposure area is needed for nanotrench contours,thus enabling reduced exposure time and enhanced geometric precision due to the mitigated proximity effect.A theoretical model based on interface mechanics allows a clear understanding of the nanotrench-assisted selective debonding behaviour in the peeling process.By using this fabrication process,multiscale metallic structures with sub-10-nm up to submillimetre features can be reliably achieved,having potential applications for anti-counterfeiting and gap-plasmon-enhanced spectroscopy.展开更多
基金Natural Science Foundation of Shanxi Province(20210302123056)Shanxi Provincial Key Research and Development Project(202102040201007,202203021223005)National Natural Science Foundation of China(52275577,52205609).
文摘High-performance infrared emitters hold substantial importance in modern engineering and physics.Here,we introduce graphene/PZT(lead zirconate titanate)heterostructure as a new platform for the development of infrared source structure based on an electron-phonon coupling and emitting mechanism.A series of electrical characterizations including carrier mobility[11,361.55 cm^(2)/(V.s)],pulse current(30 ms response time),and cycling stability(2000 cycles)modulated by polarized film was provided.
基金We gratefully acknowledge the financial support from the National Natural Science Foundation of China(51722503,51621004,21705036 and 21975067)the Natural Science Foundation of Hunan Province,China(2018JJ3035).
文摘Construction of in-plane p-n junction with clear interface by using homogenous materials is an important issue in two-dimensional transistors,which have great potential in the applications of next-generation integrated circuit and optoelectronic devices.Hence,a controlled and facile method to achieve p-n interface is desired.Molybdenum sulfide(MoS2)has shown promising potential as an atomic-layer ntype semiconductor in electronics and optoelectronics.Here,we developed a facile and reliable approach to in-situ transform n-type MoS2 into p-type MoO3 to form lateral p-n junction via a KI/I2 solution-based chemical oxidization process.The lateral MoS2/MoO3 p-n junction exhibits a highly efficient photoresponse and ideal rectifying behavior,with a maximum external quantum efficiency of^650%,~3.6 mA W-1 at 0 V,and a light switching ratio of^102.The importance of the built-in p-n junction with such a high performance is further confirmed by high-resolution photocurrent mapping.Due to the high photoresponse at low source-drain voltage(VDS)and gate voltage(VG),the formed MoS2/MoO3 junction p-n diode shows potential applications in low-power operating photodevices and logic circuits.Our findings highlight the prospects of the local transformation of carrier type for high-performance MoS2-based electronics,optoelectronics and CMOS logic circuits.
基金financial support from the National Natural Science Foundation of China(Grant nos.11574078 and 51722503).
文摘Reliable fabrication of multiscale metallic patterns with precise geometry and size at both the nanoscale and macroscale is of importance for various applications in electronic and optical devices.The existing fabrication processes,which usually involve film deposition in combination with electron-beam patterning,are either timeconsuming or offer limited precision.Inspired by the kirigami,an ancient handicraft art of paper cutting,this work demonstrates an electron-beam patterning process for multiscale metallic structures with significantly enhanced efficiency and precision.Similar to the kirigami,in which the final pattern is defined by cutting its contour in a paper and then removing the unwanted parts,we define the target multiscale structures by first creating nanotrench contours in a metallic film via an electron-beam-based process and then selectively peeling the separated film outside the contours.Compared with the conventional approach,which requires the exposure of the whole pattern,much less exposure area is needed for nanotrench contours,thus enabling reduced exposure time and enhanced geometric precision due to the mitigated proximity effect.A theoretical model based on interface mechanics allows a clear understanding of the nanotrench-assisted selective debonding behaviour in the peeling process.By using this fabrication process,multiscale metallic structures with sub-10-nm up to submillimetre features can be reliably achieved,having potential applications for anti-counterfeiting and gap-plasmon-enhanced spectroscopy.
