Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community.In this study,atom probe tomogra...Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community.In this study,atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO_(2) multilayers.Compared with phosphorous singly doped Si nanocrystals,it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved.Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy,which also reduces the formation energy of phosphorous in Si nanocrystals.The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals,which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.展开更多
Recent advances in quantum computing devices make studies on the carrier transport behaviors of silicon nanocrystals(Si NCs)under cryogenic temperature a most important subject.In this work,we study the electrical pro...Recent advances in quantum computing devices make studies on the carrier transport behaviors of silicon nanocrystals(Si NCs)under cryogenic temperature a most important subject.In this work,we study the electrical properties modified by B dopants in Si NC/SiC multilayers.Mobility measurement shows that the scattering mechanism that dominates in our samples in a low temperature range is ionized impurity scattering.Three carrier transport behaviors are identified as variable range hopping(VRH)(20-100 K),multiple phonon hopping(MPH)(100-500 K)and thermally-activated mechanisms(500-660 K).At temperature ranges as low as 30 K,we observe the effect of the Coulomb gap in B-doped Si NC/SiC multilayers that obey the Efros and Shklovskii(ES)law,which was not present in our previous studies concerning Si NC multilayers.The crossover temperature Tc is observed to increase with rising B-doping concentrations,which demonstrates another interesting effect of doping in controlling the electrical properties of Si NCs.展开更多
基金Project supported by the National Key Research and Development Program of China (Grant No.2018YFB2200101)the National Natural Science Foundation of China (Grant Nos.62004078 and 61921005)+4 种基金Natural Science Foundation of Jiangsu Province (Grant No.BK20201073)Natural Science Foundation of Ningbo (Grant No.2021J068)ANR DONNA (Grant No.ANR-18-CE09-0034)Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou (Grant No.TD2022012)partially supported by the CNRS Federation IRMA-FR 3095。
文摘Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community.In this study,atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO_(2) multilayers.Compared with phosphorous singly doped Si nanocrystals,it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved.Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy,which also reduces the formation energy of phosphorous in Si nanocrystals.The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals,which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.
基金supported by Quantum Science and Technology–National Science and Technology Major Project(Grant No.2024ZD0301100)the National Key R&D Program of China(Grant No.2018YFB2200101)the National Natural Science Foundation of China(Grant Nos.61921005 and62004078)。
文摘Recent advances in quantum computing devices make studies on the carrier transport behaviors of silicon nanocrystals(Si NCs)under cryogenic temperature a most important subject.In this work,we study the electrical properties modified by B dopants in Si NC/SiC multilayers.Mobility measurement shows that the scattering mechanism that dominates in our samples in a low temperature range is ionized impurity scattering.Three carrier transport behaviors are identified as variable range hopping(VRH)(20-100 K),multiple phonon hopping(MPH)(100-500 K)and thermally-activated mechanisms(500-660 K).At temperature ranges as low as 30 K,we observe the effect of the Coulomb gap in B-doped Si NC/SiC multilayers that obey the Efros and Shklovskii(ES)law,which was not present in our previous studies concerning Si NC multilayers.The crossover temperature Tc is observed to increase with rising B-doping concentrations,which demonstrates another interesting effect of doping in controlling the electrical properties of Si NCs.
