Monolithic integration of quantum dot(QD)gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources.Recent developments have demonstrated superior device re...Monolithic integration of quantum dot(QD)gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources.Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy ofⅡ-Ⅴdevices on Si at elevated temperatures.Yet,thick,defect management epi designs prevent vertical light coupling from the gain region to the Si-on-lnsulator waveguides.Here,we demonstrate the frst electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned(001)Si wafer with a buttcoupled configuration.Unique growth and fabrication challenges imposed by the template architecture have been resolved,contributing to continuous wave lasing to 60℃and a maximum double-side output power of 126.6 mW at 20℃with a double-side wall-plug efficiency of 8.6%.The potential for robust on-chip laser operation and effcient lowloss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.展开更多
基金We thank W.Jin,Z.Zhang,J.C.Norman,M.Dumont,MJ.Kennedy,and C.Xiang for useful discussions and help with the fabrication and testing.This material is based on research sponsored by Defense Advanced Research Projects Agency(No.HR0011-20-C-0142)Air Force Research Laboratory under AIM Photonics(agreement number FA8650-21-2-1000).
文摘Monolithic integration of quantum dot(QD)gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources.Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy ofⅡ-Ⅴdevices on Si at elevated temperatures.Yet,thick,defect management epi designs prevent vertical light coupling from the gain region to the Si-on-lnsulator waveguides.Here,we demonstrate the frst electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned(001)Si wafer with a buttcoupled configuration.Unique growth and fabrication challenges imposed by the template architecture have been resolved,contributing to continuous wave lasing to 60℃and a maximum double-side output power of 126.6 mW at 20℃with a double-side wall-plug efficiency of 8.6%.The potential for robust on-chip laser operation and effcient lowloss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.
