Crystalline silicon(c-Si)has been widely used in semiconductor and energy-related industries.A significant challenge in c-Si production is the requirement for high temperatures or highly reactive precursors to promote...Crystalline silicon(c-Si)has been widely used in semiconductor and energy-related industries.A significant challenge in c-Si production is the requirement for high temperatures or highly reactive precursors to promote Si–Si bond formation.Herein,we demonstrate a new process for preparing c-Si directly from hydride-terminated silicane(HSi)under mild conditions.We design a dehydrocoupling approach that effectively creates Si–Si bonds between HSi flakes via nucleophilic attack by Lewis base reagent at room temperature.c-Si produced through this wet-chemistry process demonstrates promising capabilities in charge carrier migration and separation under visible light irradiation.Compared to all the existing c-Simanufacturing processes,the reported approach drastically reduces the required reaction temperature and provides a new strategy to tailor the electronic and photophysical properties of c-Si for optoelectronic and catalytic applications.展开更多
基金supported by the National Natural Science Foundation of China(grant no.22175201)the Pearl River Recruitment Program of Talent(grant no.2019QN01C108)+3 种基金the Guangzhou Science and Technology Programme(grant no.2024A04J6360)the Guangdong Basic Research Center of Excellence for Functional Molecular Engineering(grant no.2024G0003)Sun Yat-sen University.Y.W.would like to acknowledge the Research Grants Council of the Hong Kong Special Administrative Region(project no.24304920)T.Z.is grateful to the Natural Sciences and Engineering Research Council(NSERC)of Canada for funding(grant no.RGPIN-2024-06286)and the Digital Research Alliance of Canada for computational resources.
文摘Crystalline silicon(c-Si)has been widely used in semiconductor and energy-related industries.A significant challenge in c-Si production is the requirement for high temperatures or highly reactive precursors to promote Si–Si bond formation.Herein,we demonstrate a new process for preparing c-Si directly from hydride-terminated silicane(HSi)under mild conditions.We design a dehydrocoupling approach that effectively creates Si–Si bonds between HSi flakes via nucleophilic attack by Lewis base reagent at room temperature.c-Si produced through this wet-chemistry process demonstrates promising capabilities in charge carrier migration and separation under visible light irradiation.Compared to all the existing c-Simanufacturing processes,the reported approach drastically reduces the required reaction temperature and provides a new strategy to tailor the electronic and photophysical properties of c-Si for optoelectronic and catalytic applications.
