In recent years,low-dimensional transition metal chalcogenide(TMC)materials have garnered growing research attention due to their superior electronic,optical,and catalytic properties compared to their bulk counterpart...In recent years,low-dimensional transition metal chalcogenide(TMC)materials have garnered growing research attention due to their superior electronic,optical,and catalytic properties compared to their bulk counterparts.The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications.In this context,the atomic substitution method has emerged as a favorable approach.It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely,crystal structures,and inherent properties of the resulting materials.In this review,we present a comprehensive overview on various strategies of atomic substitution employed in the synthesis of zero-dimensional,one-dimensional and two-dimensional TMC materials.The effects of substituting elements,substitution ratios,and substitution positions on the structures and morphologies of resulting material are discussed.The enhanced electrocatalytic performance and photovoltaic properties of the obtained materials are also provided,emphasizing the role of atomic substitution in achieving these advancements.Finally,challenges and future prospects in the field of atomic substitution for fabricating low-dimensional TMC materials are summarized.展开更多
Two-dimensional conjugated polymers(2DCPs)have received great interest in smart devices due to their unique physical properties associated with flexibility,nanosized thickness,and correlated quantum size effect.Contro...Two-dimensional conjugated polymers(2DCPs)have received great interest in smart devices due to their unique physical properties associated with flexibility,nanosized thickness,and correlated quantum size effect.Control of interlayer interactions of multilayer 2DCPs is crucial for modulating the confinement of charge carriers,heat,and photons to give remarkable properties because of the breaking of symmetry.However,to date,it is unclear how the multilayers of 2DCPs affect their physical properties.In this article,we for the first time perform a density functional theory calculation for the interlayer slipping effect on in-plane electronic properties of few-layer 2DCPs.Based on five homopolymers formed by C-C bonds with various stacking configurations beyond the inclined and serrated ones,results show that a moderate electric field causes the valence(conduction)band of few-layer 2DCPs to exhibit distinctive electrical characteristics which are dominated by the outermost two layers on hole(electron)enriched side.Analysis based on recombined molecular orbitals reveals that band properties are sensitive to the interlayer offsets when they result from the interference among multiple orbitals from each building block.This result provides a new guideline for manipulating charge transfer and spintronic properties of few-layer 2DCPs through an electric field to advance their various applications.展开更多
A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-are...A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality(ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of(5 ×50) cm^2 dimension with >99% ultra-highly oriented grains.This growth was achieved by:(1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate;(2)epitaxial growth of graphene islands on the Cu(1 1 1) surface;(3) seamless merging of such graphene islands into a graphene film with high single crystallinity and(4) the ultrafast growth of graphene film.These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains(if any), has a mobility up to ~23,000 cm^2 V^(-1)s^(-1)at 4 K and room temperature sheet resistance of ~230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.展开更多
Regarding the reverse process of materials growth,etching has been widely concerned to indirectly probe the growth kinetics,offering an avenue in governing the growth of two-dimensional(2D)materials.In this work,inter...Regarding the reverse process of materials growth,etching has been widely concerned to indirectly probe the growth kinetics,offering an avenue in governing the growth of two-dimensional(2D)materials.In this work,interface-driven anisotropic etching mode is demonstrated for the first time to be generally applied to 2D heterostructures.It is shown that the typical in-plane graphene and hexagonal boron nitride(h-BN)heterostructures follow a multi-stage etching behavior initiated first along the interfacial region between the two materials and then along edges of neighboring h-BN flakes and finally along central edges of hBN.By accurately tuning etching conditions in the chemical vapor deposition process,series of etched 2D heterostructure patterns are controllably produced.Furthermore,scaled formation of graphene and h-BN heterostructures arrays has been realized with full assist of as-proposed etching mechanism,offering a direct top-down method to make 2D orientated heterostructures with order and complexity.Detection of interface-driven multi-staged anisotropic etching mode will shed light on understanding growth mechanism and further expanding wide applications of 2D heterostructures.展开更多
The effect of twist angle on the hydrogenation of bilayer graphene （BLG） is systematically explored by density functional theory （DFT） calculations. We found that a twist between the upper and lower layers of the ...The effect of twist angle on the hydrogenation of bilayer graphene （BLG） is systematically explored by density functional theory （DFT） calculations. We found that a twist between the upper and lower layers of the graphene BLGs, either big or small, interferes with the formation of inter-layer C-C covalent bonds and this leads to strong resistance to hydrogenation. In addition, the electronic properties of stable, hydrogenated twisted BLG with different twist angles and degrees of H coverage were investigated. This study paves the way to the selective functionalization of BLG for various applications.展开更多
Erratum to Nano Research 2022,15(6):4909−4915 https://doi.org/10.1007/s12274-022-4193-x The affiliation of the author“Feng Ding”was unfortunately mistakenly marked.This error did not affect any of the content and co...Erratum to Nano Research 2022,15(6):4909−4915 https://doi.org/10.1007/s12274-022-4193-x The affiliation of the author“Feng Ding”was unfortunately mistakenly marked.This error did not affect any of the content and conclusions from the published paper.In addition,one funding was unfortunately forgotten.This error did not affect any of the content and conclusions from the published paper.展开更多
In the epitaxial growth of two-dimensional(2D)materials on substrates,2D polycrystals with various shapes have been broadly observed,but their formation mechanisms are still highly elusive.Here we present a complete s...In the epitaxial growth of two-dimensional(2D)materials on substrates,2D polycrystals with various shapes have been broadly observed,but their formation mechanisms are still highly elusive.Here we present a complete study on the formation mechanisms of various 2D polycrystals.The structures of the 2D polycrystals are dependent on the symmetries of both the 2D material and the substrate.We build four complete libraries of 2D polycrystals for(i)threefold symmetric 2D materials on two-or six-fold symmetric substrates(i.e.,family-Ⅲ/Ⅱor-Ⅲ/Ⅵ),(ii)threefold symmetric 2D materials on fourfold symmetric substrates(i.e.family-Ⅲ/Ⅳ),(iii)fourfold symmetric 2D materials on three-or six-fold symmetric substrates(i.e.,family-Ⅳ/Ⅲor-Ⅳ/Ⅵ),and(iv)sixfold symmetric 2D materials on fourfold symmetric substrates(i.e.,family-Ⅵ/Ⅳ),respectively.The four libraries of 2D polycrystals are consistent with many existing experimental observations and can be used to guide the experimental synthesis of various 2D polycrystals.展开更多
基金supported by the Teli Fellowship from Beijing Institute of Technology,the National Natural Science Foundation of China(Nos.52303366,22173109).
文摘In recent years,low-dimensional transition metal chalcogenide(TMC)materials have garnered growing research attention due to their superior electronic,optical,and catalytic properties compared to their bulk counterparts.The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications.In this context,the atomic substitution method has emerged as a favorable approach.It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely,crystal structures,and inherent properties of the resulting materials.In this review,we present a comprehensive overview on various strategies of atomic substitution employed in the synthesis of zero-dimensional,one-dimensional and two-dimensional TMC materials.The effects of substituting elements,substitution ratios,and substitution positions on the structures and morphologies of resulting material are discussed.The enhanced electrocatalytic performance and photovoltaic properties of the obtained materials are also provided,emphasizing the role of atomic substitution in achieving these advancements.Finally,challenges and future prospects in the field of atomic substitution for fabricating low-dimensional TMC materials are summarized.
基金supported by the National Natural Science Foundation of China(52233010)CAS Project for Young Scientists in Basic Research(YSBR-053)。
文摘Two-dimensional conjugated polymers(2DCPs)have received great interest in smart devices due to their unique physical properties associated with flexibility,nanosized thickness,and correlated quantum size effect.Control of interlayer interactions of multilayer 2DCPs is crucial for modulating the confinement of charge carriers,heat,and photons to give remarkable properties because of the breaking of symmetry.However,to date,it is unclear how the multilayers of 2DCPs affect their physical properties.In this article,we for the first time perform a density functional theory calculation for the interlayer slipping effect on in-plane electronic properties of few-layer 2DCPs.Based on five homopolymers formed by C-C bonds with various stacking configurations beyond the inclined and serrated ones,results show that a moderate electric field causes the valence(conduction)band of few-layer 2DCPs to exhibit distinctive electrical characteristics which are dominated by the outermost two layers on hole(electron)enriched side.Analysis based on recombined molecular orbitals reveals that band properties are sensitive to the interlayer offsets when they result from the interference among multiple orbitals from each building block.This result provides a new guideline for manipulating charge transfer and spintronic properties of few-layer 2DCPs through an electric field to advance their various applications.
基金supported by National Key R&D Program of China (2016YFA0300903, 2016YFA0300802, 2014CB932500 and 2016YFA0200101)National Natural Science Foundation of China (51522201, 11474006, 11327902, 11234001, 21525310, 91433102 and 21573186)+1 种基金Postdoctoral Innovative Personnel Support Program (BX201700014)National Program for Thousand Young Talents of China and the Institute for Basic Science (IBS-R019-D1) of Korea
文摘A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality(ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of(5 ×50) cm^2 dimension with >99% ultra-highly oriented grains.This growth was achieved by:(1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate;(2)epitaxial growth of graphene islands on the Cu(1 1 1) surface;(3) seamless merging of such graphene islands into a graphene film with high single crystallinity and(4) the ultrafast growth of graphene film.These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains(if any), has a mobility up to ~23,000 cm^2 V^(-1)s^(-1)at 4 K and room temperature sheet resistance of ~230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.
基金funding from the National Natural Science Foundation of China(No.52002267).
文摘Regarding the reverse process of materials growth,etching has been widely concerned to indirectly probe the growth kinetics,offering an avenue in governing the growth of two-dimensional(2D)materials.In this work,interface-driven anisotropic etching mode is demonstrated for the first time to be generally applied to 2D heterostructures.It is shown that the typical in-plane graphene and hexagonal boron nitride(h-BN)heterostructures follow a multi-stage etching behavior initiated first along the interfacial region between the two materials and then along edges of neighboring h-BN flakes and finally along central edges of hBN.By accurately tuning etching conditions in the chemical vapor deposition process,series of etched 2D heterostructure patterns are controllably produced.Furthermore,scaled formation of graphene and h-BN heterostructures arrays has been realized with full assist of as-proposed etching mechanism,offering a direct top-down method to make 2D orientated heterostructures with order and complexity.Detection of interface-driven multi-staged anisotropic etching mode will shed light on understanding growth mechanism and further expanding wide applications of 2D heterostructures.
文摘The effect of twist angle on the hydrogenation of bilayer graphene （BLG） is systematically explored by density functional theory （DFT） calculations. We found that a twist between the upper and lower layers of the graphene BLGs, either big or small, interferes with the formation of inter-layer C-C covalent bonds and this leads to strong resistance to hydrogenation. In addition, the electronic properties of stable, hydrogenated twisted BLG with different twist angles and degrees of H coverage were investigated. This study paves the way to the selective functionalization of BLG for various applications.
基金supported by the Teli Fellowship from Beijing Institute of Technologythe National Natural Science Foundation of China(52303366,22173109,and 22333005)+1 种基金High-Talent Grant(SIAT-SE3G0991010,2023)Startup Grant from Shenzhen Institute of Advanced Technology。
基金The authors acknowledge funding from the National Natural Science Foundation of China(No.52002267)the Institute for Basic Science of Republic of Korea(No.IBS-R019-D1).
文摘Erratum to Nano Research 2022,15(6):4909−4915 https://doi.org/10.1007/s12274-022-4193-x The affiliation of the author“Feng Ding”was unfortunately mistakenly marked.This error did not affect any of the content and conclusions from the published paper.In addition,one funding was unfortunately forgotten.This error did not affect any of the content and conclusions from the published paper.
基金The authors acknowledge support from the Institute for Basic Science(IBS-R019-D1)South Korea,the Chinese Academy of Sciences,and the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB30000000),P.R.China.
文摘In the epitaxial growth of two-dimensional(2D)materials on substrates,2D polycrystals with various shapes have been broadly observed,but their formation mechanisms are still highly elusive.Here we present a complete study on the formation mechanisms of various 2D polycrystals.The structures of the 2D polycrystals are dependent on the symmetries of both the 2D material and the substrate.We build four complete libraries of 2D polycrystals for(i)threefold symmetric 2D materials on two-or six-fold symmetric substrates(i.e.,family-Ⅲ/Ⅱor-Ⅲ/Ⅵ),(ii)threefold symmetric 2D materials on fourfold symmetric substrates(i.e.family-Ⅲ/Ⅳ),(iii)fourfold symmetric 2D materials on three-or six-fold symmetric substrates(i.e.,family-Ⅳ/Ⅲor-Ⅳ/Ⅵ),and(iv)sixfold symmetric 2D materials on fourfold symmetric substrates(i.e.,family-Ⅵ/Ⅳ),respectively.The four libraries of 2D polycrystals are consistent with many existing experimental observations and can be used to guide the experimental synthesis of various 2D polycrystals.
