Two-dimensional(2D)semiconducting materials and transition-metal oxides are promising materials for nonvolatile memory and brain-inspired neuromorphic computing applications.However,it remains chal-lenging to obtain h...Two-dimensional(2D)semiconducting materials and transition-metal oxides are promising materials for nonvolatile memory and brain-inspired neuromorphic computing applications.However,it remains chal-lenging to obtain high-quality stacked 2D films with low energy consumptions(or drive currents)be-cause of their high interfacial resistance.In this study,we synthesized 2D Ti_(3)C_(2)T_(x)MXene-derived three-dimensional(3D)TiO_(2)nanoflowers(NFs)as a feasible resistive switching(RS)material with outstanding electronic properties and synaptic learning capabilities.The electrical and optical characteristics of the synthesized material were determined through density functional theory calculations.Electrical measure-ments of the Al/Ti_(3)C_(2)T_(x)-TiO_(2)NF/Pt memory device indicated the occurrence of forming-free switching phenomena with extremely low switching voltages(0.68-0.53 V),stable ON/OFF ratio(2.3×103),and retention greater than 105 s.The Holt-Winters exponential smoothing technique was used for mod-eling and predicting the switching voltages of the RS device.The mechanism underlying the reliable RS was confirmed by observing the dense conductive filaments through conductive atomic force mi-croscopy.Interestingly,the 2D Ti_(3)C_(2)T_(x)MXene-derived 3D TiO_(2)NF-based RS device mimicked the po-tentiation/depression and spike-time-dependent plasticity of a biological synapse.Finally,a convolutional neural network was implemented based on the observed synaptic weights of Al/Ti_(3)C_(2)T_(x)-TiO_(2)NF/Pt for image-edge detection.展开更多
基金supported by the National Research Foundation of Korea (NRF)grant funded by the Korean government (No.2016R1A3B 1908249)the Samsung Semiconductor Research Center at Korea University for their support (No.IO201211-08116-01).
文摘Two-dimensional(2D)semiconducting materials and transition-metal oxides are promising materials for nonvolatile memory and brain-inspired neuromorphic computing applications.However,it remains chal-lenging to obtain high-quality stacked 2D films with low energy consumptions(or drive currents)be-cause of their high interfacial resistance.In this study,we synthesized 2D Ti_(3)C_(2)T_(x)MXene-derived three-dimensional(3D)TiO_(2)nanoflowers(NFs)as a feasible resistive switching(RS)material with outstanding electronic properties and synaptic learning capabilities.The electrical and optical characteristics of the synthesized material were determined through density functional theory calculations.Electrical measure-ments of the Al/Ti_(3)C_(2)T_(x)-TiO_(2)NF/Pt memory device indicated the occurrence of forming-free switching phenomena with extremely low switching voltages(0.68-0.53 V),stable ON/OFF ratio(2.3×103),and retention greater than 105 s.The Holt-Winters exponential smoothing technique was used for mod-eling and predicting the switching voltages of the RS device.The mechanism underlying the reliable RS was confirmed by observing the dense conductive filaments through conductive atomic force mi-croscopy.Interestingly,the 2D Ti_(3)C_(2)T_(x)MXene-derived 3D TiO_(2)NF-based RS device mimicked the po-tentiation/depression and spike-time-dependent plasticity of a biological synapse.Finally,a convolutional neural network was implemented based on the observed synaptic weights of Al/Ti_(3)C_(2)T_(x)-TiO_(2)NF/Pt for image-edge detection.
