In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB a...In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB and a maximum on-chip output power of 8.2 dBm are demonstrated upon 1480 nm bidirectional pumping.Due to the improved optical mode field distribution within the active erbium-doped lithium niobate film and the mode overlap ratio between the pump and signal sources,a 15% high conversion efficiency can be achieved at a modest pump power of 45 mW.Furthermore,the noise figure of the amplifier can be maintained below 6 dB for low-input-signal power levels.Compared to state-of-the-art erbium-doped waveguide amplifiers(EDWAs),this heterogeneously integrated device shows superior gain performance at the desired optical C-band while avoiding the complex plasma etching process of lithium niobate,providing an inspirative solution for power compensation in the optical telecommunications.展开更多
Chalcogenide glass (ChG) is an attractive material for highly efficient nonlinear photonics,which can cover an ultrabroadband wavelength window from the near-visible to the footprint infrared region. However,it remain...Chalcogenide glass (ChG) is an attractive material for highly efficient nonlinear photonics,which can cover an ultrabroadband wavelength window from the near-visible to the footprint infrared region. However,it remains a challenge to implement highly-efficient and low-threshold optical parametric processes in chip-scale ChG devices due to thermal and light-induced instabilities as well as a high-loss factor in ChG films. Here,we develop a systematic fabrication process for high-performance photonic-chip-integrated ChG devices,by which planarintegrated ChG microresonators with an intrinsic quality (Q) factor above 1 million are demonstrated. In particular,an in situ light-induced annealing method is introduced to overcome the longstanding instability underlying ChG film. In high-Q ChG microresonators,optical parametric oscillations with threshold power as low as 5.4 mW are demonstrated for the first time,to our best knowledge. Our results would contribute to efforts of making efficient and low-threshold optical microcombs not only in the near-infrared as presented but more promisingly in the midinfrared range.展开更多
Stimulated Brillouin scattering in planar integrated circuits promises to realize compact and highly coherent lasers.Here we report efficient Brillouin lasing at telecommunication wavelength from a planar Ge_(25)Sb_(1...Stimulated Brillouin scattering in planar integrated circuits promises to realize compact and highly coherent lasers.Here we report efficient Brillouin lasing at telecommunication wavelength from a planar Ge_(25)Sb_(10)S_(65) chalcogenide(ChG)resonator with a high quality factor above 106.A low lasing threshold of 24.8 mW is achieved with a slope efficiency of 8.3%.An 8-kHz linewidth is measured for 1.56-mW on-chip output power.This work offers a good opportunity to enrich the versatility and functionality of the ChG photonics on account of their intrinsic advantages of low loss,high third-order nonlinearity,and potential capacity for wafer-scale fabrication.展开更多
基金National Key Research and Development Program of China(2023YFB2805100)Natural Science Foundation of Guangdong Province(2023A1515110068)National Natural Science Foundation of China(62475296).
文摘In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB and a maximum on-chip output power of 8.2 dBm are demonstrated upon 1480 nm bidirectional pumping.Due to the improved optical mode field distribution within the active erbium-doped lithium niobate film and the mode overlap ratio between the pump and signal sources,a 15% high conversion efficiency can be achieved at a modest pump power of 45 mW.Furthermore,the noise figure of the amplifier can be maintained below 6 dB for low-input-signal power levels.Compared to state-of-the-art erbium-doped waveguide amplifiers(EDWAs),this heterogeneously integrated device shows superior gain performance at the desired optical C-band while avoiding the complex plasma etching process of lithium niobate,providing an inspirative solution for power compensation in the optical telecommunications.
基金National Key Research and Development Program of China (2019YFA0706301)Key Project in Broadband Communication and New Network of the Ministry of Science and Technology (MOST)(2018YFB1801003)+3 种基金National Natural Science Foundation of China (61975242,U2001601)Key Project for Science and Technology of Guangzhou City (201904020048)Science and Technology Planning Project of Guangdong Province (2019A1515010774)Science Foundation of Guangzhou City (202002030103)。
文摘Chalcogenide glass (ChG) is an attractive material for highly efficient nonlinear photonics,which can cover an ultrabroadband wavelength window from the near-visible to the footprint infrared region. However,it remains a challenge to implement highly-efficient and low-threshold optical parametric processes in chip-scale ChG devices due to thermal and light-induced instabilities as well as a high-loss factor in ChG films. Here,we develop a systematic fabrication process for high-performance photonic-chip-integrated ChG devices,by which planarintegrated ChG microresonators with an intrinsic quality (Q) factor above 1 million are demonstrated. In particular,an in situ light-induced annealing method is introduced to overcome the longstanding instability underlying ChG film. In high-Q ChG microresonators,optical parametric oscillations with threshold power as low as 5.4 mW are demonstrated for the first time,to our best knowledge. Our results would contribute to efforts of making efficient and low-threshold optical microcombs not only in the near-infrared as presented but more promisingly in the midinfrared range.
基金supported by the Key Project in Broadband Communication and New Network of the Ministry of Science and Technology(MOST)(No.2020YFB1805800).
文摘Stimulated Brillouin scattering in planar integrated circuits promises to realize compact and highly coherent lasers.Here we report efficient Brillouin lasing at telecommunication wavelength from a planar Ge_(25)Sb_(10)S_(65) chalcogenide(ChG)resonator with a high quality factor above 106.A low lasing threshold of 24.8 mW is achieved with a slope efficiency of 8.3%.An 8-kHz linewidth is measured for 1.56-mW on-chip output power.This work offers a good opportunity to enrich the versatility and functionality of the ChG photonics on account of their intrinsic advantages of low loss,high third-order nonlinearity,and potential capacity for wafer-scale fabrication.
