Leveraging its superior waveguide properties,silicon-nitride(Si_(3)N_(4))photonics is emerging to expand the applications of photonic integrated circuits to optical systems where bulk optics and fibers today still dom...Leveraging its superior waveguide properties,silicon-nitride(Si_(3)N_(4))photonics is emerging to expand the applications of photonic integrated circuits to optical systems where bulk optics and fibers today still dominate.In order to fully leverage its advantages,heterogeneous integration ofⅢ-Ⅴgain elements on Si_(3)N_(4)is one of the most critical steps.In this paper,we demonstrate aⅢ-Ⅴ-on-Si_(3)N_(4)widely tunable narrow-linewidth laser based on micro-transfer printing.Detailed design considerations of the tolerantⅢ-Ⅴ-to-Si_(3)N_(4)vertical coupler,Si_(3)N_(4)-based micro-ring resonators(MRRs),and micro-heaters are discussed.By introducing the dispersion of Si_(3)N_(4)waveguide in the design,the proposed Vernier MRRs enable an extended tuning range over multiple Vernier periods.The laser shows a wavelength tuning range of 54 nm in C and L bands with intrinsic linewidth less than 25 kHz.Within the tuning range,the side mode suppression ratio is larger than 40 dB and the output power in the Si_(3)N_(4)waveguide reaches 6.3 mW.The integration process allows for the fabrication and quality control of both the Si_(3)N_(4)circuits andⅢ-Ⅴdevices in its own foundry,which greatly enhances the integration yield and paves the way for large-scale integration.展开更多
文摘Leveraging its superior waveguide properties,silicon-nitride(Si_(3)N_(4))photonics is emerging to expand the applications of photonic integrated circuits to optical systems where bulk optics and fibers today still dominate.In order to fully leverage its advantages,heterogeneous integration ofⅢ-Ⅴgain elements on Si_(3)N_(4)is one of the most critical steps.In this paper,we demonstrate aⅢ-Ⅴ-on-Si_(3)N_(4)widely tunable narrow-linewidth laser based on micro-transfer printing.Detailed design considerations of the tolerantⅢ-Ⅴ-to-Si_(3)N_(4)vertical coupler,Si_(3)N_(4)-based micro-ring resonators(MRRs),and micro-heaters are discussed.By introducing the dispersion of Si_(3)N_(4)waveguide in the design,the proposed Vernier MRRs enable an extended tuning range over multiple Vernier periods.The laser shows a wavelength tuning range of 54 nm in C and L bands with intrinsic linewidth less than 25 kHz.Within the tuning range,the side mode suppression ratio is larger than 40 dB and the output power in the Si_(3)N_(4)waveguide reaches 6.3 mW.The integration process allows for the fabrication and quality control of both the Si_(3)N_(4)circuits andⅢ-Ⅴdevices in its own foundry,which greatly enhances the integration yield and paves the way for large-scale integration.
