Herein,we report on the fabrication of a heterostructure diode adopting a p-Ni_(0.8)Cu_(0.2)WO_(4)oxide/n-Si junction and its demonstration toward a high-speed rectifier circuit up to 1 MHz operation.Novel p-type Cu-s...Herein,we report on the fabrication of a heterostructure diode adopting a p-Ni_(0.8)Cu_(0.2)WO_(4)oxide/n-Si junction and its demonstration toward a high-speed rectifier circuit up to 1 MHz operation.Novel p-type Cu-substituted NiWO_(4)was synthesized via a solid-state reaction,and its thin-film form was successfully deposited using an e-beam evaporation method.From X-ray diffraction and Raman spectroscopy results,it was confirmed that all the deposited Cu-substituted NiWO_(4)films exhibited amorphous phases,irrespective of the substrate heating temperature.UV-visible transmittance and electrical resistivity values decreased as substrate heating temperature was increased from 100 to 300℃,revealing that optical transparency and electrical conductivity were in a trade-off relation in the Cu-substituted NiWO_(4)film.Upon fabricating the p-Ni_(0.8)Cu_(0.2)WO_(4)/n-Si heterostructure diode,a highly rectifying behaviour was attained with an ideality factor of 1.23 and an on/off current ratio of∼104.When we configured an AC to DC converting half-wave rectifier circuit with the p-Ni_(0.8)Cu_(0.2)WO_(4)/n-Si diode,a high-speed operation up to 1 MHz was demonstrated,thereby strongly supporting that our newly developed p-type oxide can be utilized as a key component in practical oxide-based electronics such as radio frequency identification.展开更多
基金supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.RS-2024-00401881)“Regional Innovation Strategy(RIS)”through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(MOE)(2023RIS-008)partly supported by research funds of Kunsan National University.
文摘Herein,we report on the fabrication of a heterostructure diode adopting a p-Ni_(0.8)Cu_(0.2)WO_(4)oxide/n-Si junction and its demonstration toward a high-speed rectifier circuit up to 1 MHz operation.Novel p-type Cu-substituted NiWO_(4)was synthesized via a solid-state reaction,and its thin-film form was successfully deposited using an e-beam evaporation method.From X-ray diffraction and Raman spectroscopy results,it was confirmed that all the deposited Cu-substituted NiWO_(4)films exhibited amorphous phases,irrespective of the substrate heating temperature.UV-visible transmittance and electrical resistivity values decreased as substrate heating temperature was increased from 100 to 300℃,revealing that optical transparency and electrical conductivity were in a trade-off relation in the Cu-substituted NiWO_(4)film.Upon fabricating the p-Ni_(0.8)Cu_(0.2)WO_(4)/n-Si heterostructure diode,a highly rectifying behaviour was attained with an ideality factor of 1.23 and an on/off current ratio of∼104.When we configured an AC to DC converting half-wave rectifier circuit with the p-Ni_(0.8)Cu_(0.2)WO_(4)/n-Si diode,a high-speed operation up to 1 MHz was demonstrated,thereby strongly supporting that our newly developed p-type oxide can be utilized as a key component in practical oxide-based electronics such as radio frequency identification.
