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Simulations of the Electron Spectrum of Quantum Wires in <i>n</i>-Si of Arbitrarily Doping Profile by Thomas-Fermi Method
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作者 Volodymyr Grimalsky Svetlana Koshevaya +1 位作者 Jesus Escobedo-Alatorre igor moroz 《Journal of Electromagnetic Analysis and Applications》 2018年第8期143-156,共14页
Electron spectrum in doped n-Si quantum wires is calculated by the Thomas-Fermi (TF) method under finite temperatures. The many-body exchange corrections are taken into account. The doping profile is arbitrary. At the... Electron spectrum in doped n-Si quantum wires is calculated by the Thomas-Fermi (TF) method under finite temperatures. The many-body exchange corrections are taken into account. The doping profile is arbitrary. At the first stage, the electron potential energy is calculated from a simple two-dimensional equation. The effective iteration scheme is proposed there that is valid for multidimensional problems. Then the energy levels and wave functions of this quantum well are simulated from the Schr&#246;dinger equations. The expansion by the full set of eigenfunctions of the linear harmonic oscillator is used. The quantum mechanical perturbation theory can be utilized to compute the energy levels. Generally, the perturbation theory for degenerate energy levels should be used. 展开更多
关键词 Cylindrical Quantum Well High ARBITRARY Doping THOMAS-FERMI METHOD Electron Spectrum Possible DEGENERATION of Levels
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