Metal halide perovskite semiconductors have garnered interest as promising materials for solar cells due to their exceptional optoelectronic properties such as long carrier diffusion length,low cost,and solution proce...Metal halide perovskite semiconductors have garnered interest as promising materials for solar cells due to their exceptional optoelectronic properties such as long carrier diffusion length,low cost,and solution processability.Notably,the power conversion efficiency(PCE)of single-junction perovskite solar cells(PSCs)has achieved a record-high value of 25.6%,while that of tandem PCSs reached nearly 30%.1 However,enhancing efficiency and ensuring long-term operational stability continue to pose significant challenge for PSCs.It is widely recognized that interfacial passivation could reduce interfacial charge recombination,enhance the crystalline quality of perovskites,and thus promote efficient hole collection.展开更多
Herein,we propose a new strategy to develop air-stable n-type organic semiconductors with non-classical thiophene aromatic diimide derivatives by replacing aromatic naphthalene with a heteroaromatic isothianaphthene c...Herein,we propose a new strategy to develop air-stable n-type organic semiconductors with non-classical thiophene aromatic diimide derivatives by replacing aromatic naphthalene with a heteroaromatic isothianaphthene core.We designed and successfully synthesized the isothianaphthene core based diimide material,N,N′-bis(n-hexyl)isothianaphthene-2,3,6,7-tetracarboxylic acid diimide(BTDI-C6)as an n-type semiconductor.Compared to N,N′-bis(n-hexyl)naphthalene-1,4,5,8-tetracarboxylic acid diimide(NDI-C6),BTDI-C6 possesses a deeper LUMO energy level of-4.21 eV,which is 0.32 eV lower than that of NDI-C6.Both molecular modelling and experimental results elucidated that organic thin film transistors(OTFTs)based on both of these materials exhibit comparable mobilities;however,the threshold voltage of BTDI-C6 based device(+7.5 V)is significantly lower than that of NDI-C6 based counterpart(+34V).Moreover,the low-lying LUMO energy level of BTDI-C6 ensures excellent air-stability which is further validated by the device performance.In addition,BTDI-C6 shows high luminescence while NDI-C6 is not luminescent at all in solution,which reveals the potential application of our newly synthesized material in n-type light-emitting transistors.展开更多
基金supported by the National Natural Science Foundation of China(nos.52373195 and 62175189)G.X.acknowledges funding support from the Opening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices,the Ministry of Education,Jianghan University(no.JDGD-202301)+1 种基金the joint China-Sweden Mobility Program(no.52211530052)I.F.P.acknowledges funding from EU’s Horizon 2020 ERA-Chair project ExCEED(grant agreement no.952008)。
文摘Metal halide perovskite semiconductors have garnered interest as promising materials for solar cells due to their exceptional optoelectronic properties such as long carrier diffusion length,low cost,and solution processability.Notably,the power conversion efficiency(PCE)of single-junction perovskite solar cells(PSCs)has achieved a record-high value of 25.6%,while that of tandem PCSs reached nearly 30%.1 However,enhancing efficiency and ensuring long-term operational stability continue to pose significant challenge for PSCs.It is widely recognized that interfacial passivation could reduce interfacial charge recombination,enhance the crystalline quality of perovskites,and thus promote efficient hole collection.
基金supported by Shenzhen Science and Technology (JCYJ20170412151139619)Shenzhen Engineering Laboratory (Shenzhen development and reform commission [2016]1592)+1 种基金Guangdong Key Research Project (2019B010924003), Guangdong International Science Collaboration Base (2019A050505003)Shenzhen Peacock Plan (KQTD2014062714543296)
文摘Herein,we propose a new strategy to develop air-stable n-type organic semiconductors with non-classical thiophene aromatic diimide derivatives by replacing aromatic naphthalene with a heteroaromatic isothianaphthene core.We designed and successfully synthesized the isothianaphthene core based diimide material,N,N′-bis(n-hexyl)isothianaphthene-2,3,6,7-tetracarboxylic acid diimide(BTDI-C6)as an n-type semiconductor.Compared to N,N′-bis(n-hexyl)naphthalene-1,4,5,8-tetracarboxylic acid diimide(NDI-C6),BTDI-C6 possesses a deeper LUMO energy level of-4.21 eV,which is 0.32 eV lower than that of NDI-C6.Both molecular modelling and experimental results elucidated that organic thin film transistors(OTFTs)based on both of these materials exhibit comparable mobilities;however,the threshold voltage of BTDI-C6 based device(+7.5 V)is significantly lower than that of NDI-C6 based counterpart(+34V).Moreover,the low-lying LUMO energy level of BTDI-C6 ensures excellent air-stability which is further validated by the device performance.In addition,BTDI-C6 shows high luminescence while NDI-C6 is not luminescent at all in solution,which reveals the potential application of our newly synthesized material in n-type light-emitting transistors.
