The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuI...The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe_4 thin film was characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), and energy dispersive X-ray analysis(EDX). The dark current-voltage characteristics of the Au/CuInGeSe_4/n-Si/Al heterojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe_4/n-Si heterojunction were studied at different temperatures in the dark.展开更多
文摘The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe_4 thin film was characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), and energy dispersive X-ray analysis(EDX). The dark current-voltage characteristics of the Au/CuInGeSe_4/n-Si/Al heterojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe_4/n-Si heterojunction were studied at different temperatures in the dark.
