We present a simple and efficient process for fabricating Ⅲ-Nitride(Ⅲ-N)mechanical resonators on flexible metal substrates.This method combines Van der Waals epitaxy of Ⅲ-N epilayers with the deposition of a thick ...We present a simple and efficient process for fabricating Ⅲ-Nitride(Ⅲ-N)mechanical resonators on flexible metal substrates.This method combines Van der Waals epitaxy of Ⅲ-N epilayers with the deposition of a thick metal stressor atop the Ⅲ-N layers.During thermal treatment,the 30μm thick metal stressor deposited on a 300 nm AlGaN/500 nm GaN layer grown on a 3 nm two-dimensional hexagonal-Boron Nitride(2D h-BN)release layer,initiates a one-step Self-Lift-Off and Transfer(SLOT)process.This process effectively transfers the Ⅲ-N heterostructure from the h-BN/Sapphire growth wafer to the flexible metal stressor substrate.Additional local etching of the metal stressor and deposition of front electrodes allow for releasing self-standing Ⅲ-N layers with integrated actuation.Fabricated Ⅲ-N MEMS drum resonators were analyzed using optical profilometry and laser Doppler vibrometer,enabling the observation of static deflections and distinct vibration modes.Finite element method(FEM)simulations were also performed to further understand experimental observations and assess the mechanical properties of the released Ⅲ-N layers,particularly enabling the estimation of stress in the GaN and AlGaN released layers.This straightforward approach not only provides a practical solution for cost-effective Ⅲ-N MEMS resonators but also ensures flexibility,and crack-free structures.展开更多
基金supported by the French National Research Agency(ANR)under the research projects FLEXIGAN(grant ANR-22-CE51-0009)FLEXMEMS(IC ARTS)+1 种基金partially INMOST(grant ANR-19-CE08-0025)supported by the Region Grand Est in France,the French national technological network RENATECH and the Institut Lafayette in Metz.
文摘We present a simple and efficient process for fabricating Ⅲ-Nitride(Ⅲ-N)mechanical resonators on flexible metal substrates.This method combines Van der Waals epitaxy of Ⅲ-N epilayers with the deposition of a thick metal stressor atop the Ⅲ-N layers.During thermal treatment,the 30μm thick metal stressor deposited on a 300 nm AlGaN/500 nm GaN layer grown on a 3 nm two-dimensional hexagonal-Boron Nitride(2D h-BN)release layer,initiates a one-step Self-Lift-Off and Transfer(SLOT)process.This process effectively transfers the Ⅲ-N heterostructure from the h-BN/Sapphire growth wafer to the flexible metal stressor substrate.Additional local etching of the metal stressor and deposition of front electrodes allow for releasing self-standing Ⅲ-N layers with integrated actuation.Fabricated Ⅲ-N MEMS drum resonators were analyzed using optical profilometry and laser Doppler vibrometer,enabling the observation of static deflections and distinct vibration modes.Finite element method(FEM)simulations were also performed to further understand experimental observations and assess the mechanical properties of the released Ⅲ-N layers,particularly enabling the estimation of stress in the GaN and AlGaN released layers.This straightforward approach not only provides a practical solution for cost-effective Ⅲ-N MEMS resonators but also ensures flexibility,and crack-free structures.
