CrN thin films are deposited on stainless steel （AISI-304） substrate using pulsed DC magnetron sputtering in a mixture of nitrogen and argon plasma. Two set of samples are prepared. The first set of sample is treate...CrN thin films are deposited on stainless steel （AISI-304） substrate using pulsed DC magnetron sputtering in a mixture of nitrogen and argon plasma. Two set of samples are prepared. The first set of sample is treated at different powers （100 W to 200 W） in a mixture of argon （95%） and nitrogen （5%）. The second set of samples is treated at different nitrogen concentrations （5% to 20%） in argon （95% to 80%） for a constant power （150 W）. X-ray diffraction （XRD） analysis exhibits the development of new phases related to different compounds. The crystallinity of CrN varies by varying the applied power and nitrogen content. Crystallite size and residual stresses of the CrN （111） plane show similar variation for the applied power and nitrogen contents. Scanning electron microscopy （SEM） analysis shows the formation of a granular surface morphology that varies with the change of powers and nitrogen content. The thickness of the film is measured using SEM cross sectional images and using atomic force microscopy （AFM） scratch analysis. The maximum film thickness （about 755 nm） is obtained for the film deposited at 5% nitrogen in 95% argon at 150 W power. For these conditions, maximum hardness is also observed.展开更多
AlON nanolayers are synthesized on Al substrate by the irradiation of energetic nitrogen ions using plasma focusing. Samples are exposed to multiple （5, 10, 15, 20 and 25） focus shots. Ion energy and ion number dens...AlON nanolayers are synthesized on Al substrate by the irradiation of energetic nitrogen ions using plasma focusing. Samples are exposed to multiple （5, 10, 15, 20 and 25） focus shots. Ion energy and ion number density range from 80 keV to 1.4 MeV and 5.6×10^19 m^- 3 to 1.3×10^19 m ^-3, respectively. Moreover, the effect of continuous annealing （473 K and 523 K） on an AlN surface layer synthesized with 25 focus shots is also examined. The main features of the X-ray diffraction （XRD） patterns with increasing focus shots are： （i） variation in the crystallinity of AlN along （111）, （200） and （311） planes, （ii） increasing average crystallite size of AlN （111） plane, and （iii） stress relaxation observed in AlN （111） and （200） planes. The crystallinity of AlN surface layer is comparatively better at 473 K annealing temperature. A broadened diffraction peak related to an aluminium oxide phase showing weak crystallinity is observed for 15 focus shots while non-bounded oxides are present in all other deposited layers. Raman and Fourier transform infrared spectroscopy （FTIR） analysis confirm the presence of AlN and Al203 for the surface layer annealed at 473 K temperature. Raman analysis shows that the overlapping of AlN and Al2Oa results in the development of residual stresses. Scanning electron microscope （SEM） results demonstrate that the formation of rounded grains （range from 20 nm to 200 nm） and variations in their microstructures features depend on the increasing number of focus shots. Decomposition of larger clusters into smaller ones is observed.展开更多
Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry （XRD）, scann...Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） are used for the structural and morphological analysis of the nitrided layers. Vickers＇ microhardness tester is utilized to investigate surface microhardness. Phase analysis shows the formation of more molybdenum nitride molecules for longer nitriding durations at fill gas pressures of 2 mbar and 3 mbar （1 bar = 105 Pa）. A considerable increase in surface microhardness （approximately by a factor of 2） is observed for longer duration （10 h） and 2-mbar pressure. Longer duration （10 h） and 2-mbar fill gas pressure favors the formation of homogeneous, smooth, hard layers by the incorporation of more nitrogen.展开更多
ZrSiN thin films are synthesized by using plasma focus through various numbers of focus shots （10, 20, and 30）, with samples placed at 9 cm away from the tip of the anode. Crystal structures, surface morphologies, a...ZrSiN thin films are synthesized by using plasma focus through various numbers of focus shots （10, 20, and 30）, with samples placed at 9 cm away from the tip of the anode. Crystal structures, surface morphologies, and elemental compositions of ZrSiN films are characterized by an X-ray diffractometer （XRD） and scanning electron microscope （SEM） attached with energy dispersive X-ray spectroscopy （EDS）. XRD patterns confirm the formations of polycrystalline ZrSiN films. Crystallinity of nitride increases with the increase of focus shot number. The average crystallite size of zirconium nitride increases from 27 ± 3 nm to 73±8 nm and microstrain decreases from 2.28 to 1.0 with the increase of the focus shot number. SEM results exhibit the formations of granular and oval-shaped microstructures, depending on the number of focus shots. EDS results confirm the presences of silicon, zirconium, nitrogen, and oxygen in the composite films. The content values of Zr and N in the composite films increase with the increase of the focus shot number.展开更多
Nanostructured multiphase zirconia films （MZFs） are deposited on Zr substrate by the irradiation of energetic oxygen ions emanated from a plasma focus device. The oxygen operating gas pressure of 1 mbar （1 bar=105...Nanostructured multiphase zirconia films （MZFs） are deposited on Zr substrate by the irradiation of energetic oxygen ions emanated from a plasma focus device. The oxygen operating gas pressure of 1 mbar （1 bar=105 Pa） provides the most appropriate ion energy flux to deposit crystalline ZrO2 films. X-ray diffraction （XRD） patterns reveal the formation of polycrystalline ZrO2 films. The crystallite size （CS）, crystal growth, and dislocation densities are attributed to increasing focus shots, sample axial distances, and working gas pressures. Phase and orientation transformations from t-ZrO2 to m-ZrO2 and c-ZrO2 are associated with increasing focus shots and continuous annealing. For lower （200 ℃） annealing temperature （AT）, full width at half maximum （FWHM） of diffraction peak, CS, and dislocation density （δ） for （020） plane are found to be 0.494, 16.6 nm, and 3.63×10-3 nm-2 while for higher （400 ℃） AT, these parameters for （111） plane are found to be 0.388, 20.87 nm, and 2.29×10-3 nm-2, respectively. Scanning electron microscope （SEM） results demonstrate the formation of rounded grains with uniform distribution. The estimated values of atomic ratio （O/Zr） in ZrO2 films deposited for different axial distances （6 cm, 9 cm, and 12 cm） are found to be 2.1, 2.2, and 2.3, respectively. Fourier transform infrared （FTIR） analysis reveals that the bands appearing at 441 cm-1 and 480 cm-1 belong to m-ZrO2 and t-ZrO2 phases, respectively. Maximum microhardness （8.65±0.45 GPa） of ZrO2 film is ～ 6.7 times higher than the microhardness of virgin Zr.展开更多
基金supported by the Higher Education Commission (HEC) of Pakistan
文摘CrN thin films are deposited on stainless steel （AISI-304） substrate using pulsed DC magnetron sputtering in a mixture of nitrogen and argon plasma. Two set of samples are prepared. The first set of sample is treated at different powers （100 W to 200 W） in a mixture of argon （95%） and nitrogen （5%）. The second set of samples is treated at different nitrogen concentrations （5% to 20%） in argon （95% to 80%） for a constant power （150 W）. X-ray diffraction （XRD） analysis exhibits the development of new phases related to different compounds. The crystallinity of CrN varies by varying the applied power and nitrogen content. Crystallite size and residual stresses of the CrN （111） plane show similar variation for the applied power and nitrogen contents. Scanning electron microscopy （SEM） analysis shows the formation of a granular surface morphology that varies with the change of powers and nitrogen content. The thickness of the film is measured using SEM cross sectional images and using atomic force microscopy （AFM） scratch analysis. The maximum film thickness （about 755 nm） is obtained for the film deposited at 5% nitrogen in 95% argon at 150 W power. For these conditions, maximum hardness is also observed.
基金supported by the Higher Education Commission of Pakistan
文摘AlON nanolayers are synthesized on Al substrate by the irradiation of energetic nitrogen ions using plasma focusing. Samples are exposed to multiple （5, 10, 15, 20 and 25） focus shots. Ion energy and ion number density range from 80 keV to 1.4 MeV and 5.6×10^19 m^- 3 to 1.3×10^19 m ^-3, respectively. Moreover, the effect of continuous annealing （473 K and 523 K） on an AlN surface layer synthesized with 25 focus shots is also examined. The main features of the X-ray diffraction （XRD） patterns with increasing focus shots are： （i） variation in the crystallinity of AlN along （111）, （200） and （311） planes, （ii） increasing average crystallite size of AlN （111） plane, and （iii） stress relaxation observed in AlN （111） and （200） planes. The crystallinity of AlN surface layer is comparatively better at 473 K annealing temperature. A broadened diffraction peak related to an aluminium oxide phase showing weak crystallinity is observed for 15 focus shots while non-bounded oxides are present in all other deposited layers. Raman and Fourier transform infrared spectroscopy （FTIR） analysis confirm the presence of AlN and Al203 for the surface layer annealed at 473 K temperature. Raman analysis shows that the overlapping of AlN and Al2Oa results in the development of residual stresses. Scanning electron microscope （SEM） results demonstrate that the formation of rounded grains （range from 20 nm to 200 nm） and variations in their microstructures features depend on the increasing number of focus shots. Decomposition of larger clusters into smaller ones is observed.
基金supported by the Higher Education Commission (HEC) of Pakistan under a research project
文摘Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry （XRD）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM） are used for the structural and morphological analysis of the nitrided layers. Vickers＇ microhardness tester is utilized to investigate surface microhardness. Phase analysis shows the formation of more molybdenum nitride molecules for longer nitriding durations at fill gas pressures of 2 mbar and 3 mbar （1 bar = 105 Pa）. A considerable increase in surface microhardness （approximately by a factor of 2） is observed for longer duration （10 h） and 2-mbar pressure. Longer duration （10 h） and 2-mbar fill gas pressure favors the formation of homogeneous, smooth, hard layers by the incorporation of more nitrogen.
基金supported by the National Project for Research for University,the Higher Education Commission(HEC),Pakistan
文摘ZrSiN thin films are synthesized by using plasma focus through various numbers of focus shots （10, 20, and 30）, with samples placed at 9 cm away from the tip of the anode. Crystal structures, surface morphologies, and elemental compositions of ZrSiN films are characterized by an X-ray diffractometer （XRD） and scanning electron microscope （SEM） attached with energy dispersive X-ray spectroscopy （EDS）. XRD patterns confirm the formations of polycrystalline ZrSiN films. Crystallinity of nitride increases with the increase of focus shot number. The average crystallite size of zirconium nitride increases from 27 ± 3 nm to 73±8 nm and microstrain decreases from 2.28 to 1.0 with the increase of the focus shot number. SEM results exhibit the formations of granular and oval-shaped microstructures, depending on the number of focus shots. EDS results confirm the presences of silicon, zirconium, nitrogen, and oxygen in the composite films. The content values of Zr and N in the composite films increase with the increase of the focus shot number.
基金Project supported by the Higher Education Commission of Pakistan
文摘Nanostructured multiphase zirconia films （MZFs） are deposited on Zr substrate by the irradiation of energetic oxygen ions emanated from a plasma focus device. The oxygen operating gas pressure of 1 mbar （1 bar=105 Pa） provides the most appropriate ion energy flux to deposit crystalline ZrO2 films. X-ray diffraction （XRD） patterns reveal the formation of polycrystalline ZrO2 films. The crystallite size （CS）, crystal growth, and dislocation densities are attributed to increasing focus shots, sample axial distances, and working gas pressures. Phase and orientation transformations from t-ZrO2 to m-ZrO2 and c-ZrO2 are associated with increasing focus shots and continuous annealing. For lower （200 ℃） annealing temperature （AT）, full width at half maximum （FWHM） of diffraction peak, CS, and dislocation density （δ） for （020） plane are found to be 0.494, 16.6 nm, and 3.63×10-3 nm-2 while for higher （400 ℃） AT, these parameters for （111） plane are found to be 0.388, 20.87 nm, and 2.29×10-3 nm-2, respectively. Scanning electron microscope （SEM） results demonstrate the formation of rounded grains with uniform distribution. The estimated values of atomic ratio （O/Zr） in ZrO2 films deposited for different axial distances （6 cm, 9 cm, and 12 cm） are found to be 2.1, 2.2, and 2.3, respectively. Fourier transform infrared （FTIR） analysis reveals that the bands appearing at 441 cm-1 and 480 cm-1 belong to m-ZrO2 and t-ZrO2 phases, respectively. Maximum microhardness （8.65±0.45 GPa） of ZrO2 film is ～ 6.7 times higher than the microhardness of virgin Zr.
