Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-v...Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.展开更多
文摘Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.
