Next-generation artificial tactile systems demand seamless integration with neuromorphic architectures to support on-edge computation and high-fidelity sensory signal processing.Despite significant advancements,curren...Next-generation artificial tactile systems demand seamless integration with neuromorphic architectures to support on-edge computation and high-fidelity sensory signal processing.Despite significant advancements,current research remains predominantly focused on optimizing individual sensor elements,and systems utilizing single neuromorphic components encounter inherent limitations in enhancing overall functionality.Here,we present a vertically integrated in-sensor processing platform,which combines a three-dimensional antiferroelectric field-effect transistor(AFEFET)device with an aluminum nitride(AlN)piezoelectric sensor.展开更多
The impact of oxygen content in the Ru electrode,grown using atomic layer deposition on ferroelectricity in Hf_(0.5)Zr_(0.5)O_(2)film is investigated.The oxygen content in Ru can be modulated by simply adjusting the d...The impact of oxygen content in the Ru electrode,grown using atomic layer deposition on ferroelectricity in Hf_(0.5)Zr_(0.5)O_(2)film is investigated.The oxygen content in Ru can be modulated by simply adjusting the deposition temperature from 210℃to 300◦C.Higher oxygen content in Ru reduces the oxygen vacancy concentration in subsequently grown Hf_(0.5)Zr_(0.5)O_(2)film,thereby mitigating the wake-up effect.However,the monoclinic phase fraction increased with decreasing Ru deposition temperature,resulting in a decrease in remanent polarization.The decreased oxygen vacancy concentration by oxygen diffusion from Ru electrode deposited at 210℃could decrease the leakage current density compared to that grown at higher temperatures.Nonetheless,the switching endurance of Hf_(0.5)Zr_(0.5)O_(2)film grown on Ru deposited at 210℃was shorter than those on Ru deposited at 300℃by 2 order of magnitude,being attributed to the oxygen diffusion caused interfacial damages.This observation suggests that the interfacial redox reactions between the electrode and Hf_(0.5)Zr_(0.5)O_(2)critically influence defect concentration,polymorphism,and the resulting ferroelectricity when using an atomic layer deposited Ru electrode to examine the impact of interfacial redox chemistry.展开更多
This study proposes a novel approach to achieving highly reliable,low-voltage polarization switching of ferroelectric Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films using polymorph-and orientation-controlled W electrodes((111)-...This study proposes a novel approach to achieving highly reliable,low-voltage polarization switching of ferroelectric Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films using polymorph-and orientation-controlled W electrodes((111)-textured a-W and(200)-textured b-W)by adjusting the sputtering conditions.We demonstrated the formation of(111)and(002)/(020)-textured HZO films on the(111)-textured a-Wand(200)-textured b-W electrodes,respectively.Under a low-voltage pulse of 1.2 V(1.5 MV/cm),a-W/HZO/a-W and b-W/HZO/b-W capacitors exhibited double-remanent polarization(2Pr)values of 29.23 mC/cm^(2)and 25.16 mC/cm^(2),which were higher than that of the TiN/HZO/TiN capacitor by 33%and 14%,respectively,and a high endurance of 109 cycles without hard-breakdown.The differences in the ferroelectric properties and switching kinetics were understood based on the polymorphism and texture of the HZO films influenced by electrode materials.展开更多
基金supported by the National Research Foundation of Korea(No.2021R1A2C2095322)supported by Grant Nos.RS-2023-00260527,RS-2023-00231985,RS2023-00235655,and RS-2024-00406007supported by BK21 FOUR(Connected AI Education&Research Program for Industry and Society Innovation,KAIST EE,No.4120200113769).
文摘Next-generation artificial tactile systems demand seamless integration with neuromorphic architectures to support on-edge computation and high-fidelity sensory signal processing.Despite significant advancements,current research remains predominantly focused on optimizing individual sensor elements,and systems utilizing single neuromorphic components encounter inherent limitations in enhancing overall functionality.Here,we present a vertically integrated in-sensor processing platform,which combines a three-dimensional antiferroelectric field-effect transistor(AFEFET)device with an aluminum nitride(AlN)piezoelectric sensor.
基金supported by the National Research Foundation of Korea,funded by the Ministry of Science and ICT(RS-2024-00445552)(50%)supported by the Technology Innovation Program(RS-2024-00509266,Development of Next-generation dielectric and electrode process equipment for logic 1 nm or less and memory x nm level)funded By the Ministry of Trade Industry&Energy(MOTIE,Korea).
文摘The impact of oxygen content in the Ru electrode,grown using atomic layer deposition on ferroelectricity in Hf_(0.5)Zr_(0.5)O_(2)film is investigated.The oxygen content in Ru can be modulated by simply adjusting the deposition temperature from 210℃to 300◦C.Higher oxygen content in Ru reduces the oxygen vacancy concentration in subsequently grown Hf_(0.5)Zr_(0.5)O_(2)film,thereby mitigating the wake-up effect.However,the monoclinic phase fraction increased with decreasing Ru deposition temperature,resulting in a decrease in remanent polarization.The decreased oxygen vacancy concentration by oxygen diffusion from Ru electrode deposited at 210℃could decrease the leakage current density compared to that grown at higher temperatures.Nonetheless,the switching endurance of Hf_(0.5)Zr_(0.5)O_(2)film grown on Ru deposited at 210℃was shorter than those on Ru deposited at 300℃by 2 order of magnitude,being attributed to the oxygen diffusion caused interfacial damages.This observation suggests that the interfacial redox reactions between the electrode and Hf_(0.5)Zr_(0.5)O_(2)critically influence defect concentration,polymorphism,and the resulting ferroelectricity when using an atomic layer deposited Ru electrode to examine the impact of interfacial redox chemistry.
基金supported by the National Research Foundation of Korea,funded by the Ministry of Science and ICT(RS-2024-00445552)(50%)supported by the Nano&Material Technology Development Program through the National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(RS-2024-00444182)(50%).
文摘This study proposes a novel approach to achieving highly reliable,low-voltage polarization switching of ferroelectric Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films using polymorph-and orientation-controlled W electrodes((111)-textured a-W and(200)-textured b-W)by adjusting the sputtering conditions.We demonstrated the formation of(111)and(002)/(020)-textured HZO films on the(111)-textured a-Wand(200)-textured b-W electrodes,respectively.Under a low-voltage pulse of 1.2 V(1.5 MV/cm),a-W/HZO/a-W and b-W/HZO/b-W capacitors exhibited double-remanent polarization(2Pr)values of 29.23 mC/cm^(2)and 25.16 mC/cm^(2),which were higher than that of the TiN/HZO/TiN capacitor by 33%and 14%,respectively,and a high endurance of 109 cycles without hard-breakdown.The differences in the ferroelectric properties and switching kinetics were understood based on the polymorphism and texture of the HZO films influenced by electrode materials.
