Purpose: We aimed to analyze the pregnancy outcomes and perinatal follow-up of mosaic embryo transfer in the preimplantation genetic testing (PGT) cycles. Method: We retrospectively selected 27 mosaic embryo transfer ...Purpose: We aimed to analyze the pregnancy outcomes and perinatal follow-up of mosaic embryo transfer in the preimplantation genetic testing (PGT) cycles. Method: We retrospectively selected 27 mosaic embryo transfer cycles as the study group and 97 euploid embryo transfer cycles as the control group after propensity score matching, which were performed in the reproductive medicine center of the Sixth Affiliated Hospital, Sun Yat-sen University, from March 2019 to September 2023. The biopsy cells from blastocyst were undertaken next generation sequencing (NGS). Results: No significant difference in pregnancy outcomes compared between the two groups. According to the size of aneuploid, fragment the level of mosaicism or blastocyst morphological gradings, there were no significant difference in mosaic embryo transfers. Conclusion: Mosaic embryo detected in the PGT cycle can lead to clinical pregnancy and live birth of healthy offspring, which can be considerate suitable for transfer.展开更多
In this work,a short-wave infrared(SWIR)n-MoSe_(2)/p-GeSn/n-germanium-on-insulator(GOI)heterojunction phototransistor(HPT)with Sn composition-graded GeSn base is proposed for improvement of overall performance at low ...In this work,a short-wave infrared(SWIR)n-MoSe_(2)/p-GeSn/n-germanium-on-insulator(GOI)heterojunction phototransistor(HPT)with Sn composition-graded GeSn base is proposed for improvement of overall performance at low cost.The Sn composition-graded GeSn base layers are grown using magnetron sputtering epitaxy technique for improvement of crystal quality with a high Sn content of 15.2%in the top layer,rendering the extension of the cutoff wavelength beyond 2400 nm and significant suppression of dark current.The enormous electron/hole injection ratio,resulting from the large bandgap offset between the MoSe_(2)emitter and the GeSn base,enables the harvesting of a high photocurrent gain of HPT.By optimizing the device parameters,a considerable responsivity of 23.79 A/W and an excellent specific detectivity of 8.24×10^(10)Jones at the peak wavelength of 2030 nm were achieved for the HPT with the dark current density of 261 mA/cm^(2)under the emitter-collector bias voltage of 1.0 V at room temperature.The fast response speed is obtained for the HPT in terms of rising/falling times of 2.8μs/9.3μs at 1550 nm,surpassing those of most van der Waals(vdW)junction-based devices.Those results demonstrate that GeSn HPTs are suitable for SWIR optoelectronic imaging and microwave photonics applications.展开更多
文摘Purpose: We aimed to analyze the pregnancy outcomes and perinatal follow-up of mosaic embryo transfer in the preimplantation genetic testing (PGT) cycles. Method: We retrospectively selected 27 mosaic embryo transfer cycles as the study group and 97 euploid embryo transfer cycles as the control group after propensity score matching, which were performed in the reproductive medicine center of the Sixth Affiliated Hospital, Sun Yat-sen University, from March 2019 to September 2023. The biopsy cells from blastocyst were undertaken next generation sequencing (NGS). Results: No significant difference in pregnancy outcomes compared between the two groups. According to the size of aneuploid, fragment the level of mosaicism or blastocyst morphological gradings, there were no significant difference in mosaic embryo transfers. Conclusion: Mosaic embryo detected in the PGT cycle can lead to clinical pregnancy and live birth of healthy offspring, which can be considerate suitable for transfer.
基金supported in part by the National Natural Science Foundation of China(Nos.62074134 and 62104205)in part by the National Key Research and Development Program of China(No.2018YFB2200103).
文摘In this work,a short-wave infrared(SWIR)n-MoSe_(2)/p-GeSn/n-germanium-on-insulator(GOI)heterojunction phototransistor(HPT)with Sn composition-graded GeSn base is proposed for improvement of overall performance at low cost.The Sn composition-graded GeSn base layers are grown using magnetron sputtering epitaxy technique for improvement of crystal quality with a high Sn content of 15.2%in the top layer,rendering the extension of the cutoff wavelength beyond 2400 nm and significant suppression of dark current.The enormous electron/hole injection ratio,resulting from the large bandgap offset between the MoSe_(2)emitter and the GeSn base,enables the harvesting of a high photocurrent gain of HPT.By optimizing the device parameters,a considerable responsivity of 23.79 A/W and an excellent specific detectivity of 8.24×10^(10)Jones at the peak wavelength of 2030 nm were achieved for the HPT with the dark current density of 261 mA/cm^(2)under the emitter-collector bias voltage of 1.0 V at room temperature.The fast response speed is obtained for the HPT in terms of rising/falling times of 2.8μs/9.3μs at 1550 nm,surpassing those of most van der Waals(vdW)junction-based devices.Those results demonstrate that GeSn HPTs are suitable for SWIR optoelectronic imaging and microwave photonics applications.
