Amorphous gallium oxide(a-Ga_(2)O_(3))has a low carrier concentration and limited mobility,which constrains its application in neuromorphic computing.In this study,Zndoped Ga_(2)O_(3)(ZGO)artificial synaptic devices w...Amorphous gallium oxide(a-Ga_(2)O_(3))has a low carrier concentration and limited mobility,which constrains its application in neuromorphic computing.In this study,Zndoped Ga_(2)O_(3)(ZGO)artificial synaptic devices were fabricated under oxygen-free conditions using radio-frequency magnetron sputtering(RFMS).Compared to undoped Ga_(2)O_(3),the ZGO device exhibited a 106-fold increase in excitatory postsynaptic current under 254 nm illumination,with the response intensity positively correlated with the optical pulse parameters.Under light pulse modulation,the devices demonstrated dynamic behavior transitioning from short-term plasticity to long-term plasticity,including paired-pulse facilitation and the learning-forgetting-relearning process.Furthermore,the electrical and optical energy consumption of synaptic events are as low as 28 fJ and 2 nJ,respectively.The mechanism analysis indicates that the persistent photoconductivity effect in the ZGO thin film is attributed to the abundant oxygen vacancies.A multi-layer perceptron simulation based on ZGO devices achieved a 90.74%accuracy in handwritten digit recognition,and maintained 76.18%accuracy even with 50%noise.Zn doping provides a new material design approach for Ga_(2)O_(3)-based neuromorphic devices,demonstrating potential for future applications in neuromorphic computing.展开更多
基金supported by the National Key Research and Development Program of China (2022YFB3606603)the Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (2020ZZ111, 2020ZZ113 and 2021ZZ130)the Natural Science Foundation of Fujian Province of China (2024J01281)。
文摘Amorphous gallium oxide(a-Ga_(2)O_(3))has a low carrier concentration and limited mobility,which constrains its application in neuromorphic computing.In this study,Zndoped Ga_(2)O_(3)(ZGO)artificial synaptic devices were fabricated under oxygen-free conditions using radio-frequency magnetron sputtering(RFMS).Compared to undoped Ga_(2)O_(3),the ZGO device exhibited a 106-fold increase in excitatory postsynaptic current under 254 nm illumination,with the response intensity positively correlated with the optical pulse parameters.Under light pulse modulation,the devices demonstrated dynamic behavior transitioning from short-term plasticity to long-term plasticity,including paired-pulse facilitation and the learning-forgetting-relearning process.Furthermore,the electrical and optical energy consumption of synaptic events are as low as 28 fJ and 2 nJ,respectively.The mechanism analysis indicates that the persistent photoconductivity effect in the ZGO thin film is attributed to the abundant oxygen vacancies.A multi-layer perceptron simulation based on ZGO devices achieved a 90.74%accuracy in handwritten digit recognition,and maintained 76.18%accuracy even with 50%noise.Zn doping provides a new material design approach for Ga_(2)O_(3)-based neuromorphic devices,demonstrating potential for future applications in neuromorphic computing.
