Recent years have seen increased interest in optoelectronic semiconductor materials,particularly those from groups Ⅱ-Ⅵ,Ⅳ-Ⅵ,and perovskite,due to their outstanding electronic and optical properties.However,the toxi...Recent years have seen increased interest in optoelectronic semiconductor materials,particularly those from groups Ⅱ-Ⅵ,Ⅳ-Ⅵ,and perovskite,due to their outstanding electronic and optical properties.However,the toxicity and environmental concerns related to heavy metals like lead and cadmium have hindered their widespread commercial use,shifting the focus to AgBiS_(2),a nontoxic,cost-effective,and promising alternative.Despite significant progress,the efficiency of AgBiS_(2)remains lower than that of perovskite or cadmium-lead-based devices,primarily due to challenges in nanocrystals(NCs)synthesis and limitations in device structure and stability when using AgBiS_(2)thin films.This review evaluates these challenges by examining the synthesis process,addressing device-related limitations,and discussing recent advancements in AgBiS_(2)research and its potential applications.It includes an analysis of AgBiS_(2)’s chemical and crystal structures,as well as its optoelectronic properties.Additionally,we review improvements in synthesizing high-quality AgBiS_(2)NCs and discuss applications such as photodetectors and X-ray/photoelectrochemical sensors.Finally,we highlight the challenges and future prospects for AgBiS_(2),offering insights into its potential for various applications.展开更多
基金supported by the Fundamental Research Funds for the Central Universities,Sun Yat-sen University(Grant No.24hytd010).
文摘Recent years have seen increased interest in optoelectronic semiconductor materials,particularly those from groups Ⅱ-Ⅵ,Ⅳ-Ⅵ,and perovskite,due to their outstanding electronic and optical properties.However,the toxicity and environmental concerns related to heavy metals like lead and cadmium have hindered their widespread commercial use,shifting the focus to AgBiS_(2),a nontoxic,cost-effective,and promising alternative.Despite significant progress,the efficiency of AgBiS_(2)remains lower than that of perovskite or cadmium-lead-based devices,primarily due to challenges in nanocrystals(NCs)synthesis and limitations in device structure and stability when using AgBiS_(2)thin films.This review evaluates these challenges by examining the synthesis process,addressing device-related limitations,and discussing recent advancements in AgBiS_(2)research and its potential applications.It includes an analysis of AgBiS_(2)’s chemical and crystal structures,as well as its optoelectronic properties.Additionally,we review improvements in synthesizing high-quality AgBiS_(2)NCs and discuss applications such as photodetectors and X-ray/photoelectrochemical sensors.Finally,we highlight the challenges and future prospects for AgBiS_(2),offering insights into its potential for various applications.
