Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully func...Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully functional photonic circuits.However,due to the low electrical conductivity and weak light absorption,TFLN cannot be directly used for fabricating photodetectors.In this study,we proposed and demonstrated a high-performance MoTe_(2)/TFLN heterostructure integrated Schottky photodetector operating at telecommunication wavelengths(1310 nm and 1550 nm).This structure enhances the photovoltaic effect by bending MoTe_(2)at the edge of one electrode,thereby achieving self-powered operation.At a wavelength of 1310 nm,the photodetector achieves a self-powered responsivity of 70 mA/W,which is among the highest for waveguide-integrated photodetectors.Additionally,due to the strong rectification effect of the Schottky junction,the photodetector exhibits an extremely low dark current of only 25 pA at−0.5 V bias voltage.The on/off ratios reach 2.63104 at 0 V and 4.13104 at−0.5 V bias.The self-powered response times were measured,showing fast response and recovery times of 160μs and 169μs,respectively.展开更多
The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent ...The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN,comprising a potentially promising material platform for photonic integrated circuits. Based on ion-implantation and wafer-bonding technologies, a 3 inch wafer-scale hybrid mono-crystalline Si/LN thin film was fabricated. A high-resolution transmission electron microscope was used to investigate the crystal-lattice arrangement of each layer and the interfaces. Only the H-atom-concentration distribution was investigated using secondary-ion mass spectroscopy. Highresolution X-ray-diffraction ω–2θ scanning was used to study the lattice properties of the Si/LN thin films. Raman measurements were performed to investigate the bulk Si and the Si thin films. Si strip-loaded straight waveguides were fabricated, and the optical propagation loss of a 5-μm-width waveguide was 6 d B/cm for the quasi-TE mode at1550 nm. The characterization results provide useful information regarding this hybrid material.展开更多
基金The National Natural Science Foundation of China(No.12105190,62275174)the Shenzhen Key Laboratory of Applied Technologies of Super-Diamond and Functional Crystals(ZDSYS20230626091303007).
文摘Thin-film lithium niobate(TFLN)is considered a crucial platform in next-generation integrated optoelectronics due to its excellent optical properties.Photodetectors are essential components for constructing fully functional photonic circuits.However,due to the low electrical conductivity and weak light absorption,TFLN cannot be directly used for fabricating photodetectors.In this study,we proposed and demonstrated a high-performance MoTe_(2)/TFLN heterostructure integrated Schottky photodetector operating at telecommunication wavelengths(1310 nm and 1550 nm).This structure enhances the photovoltaic effect by bending MoTe_(2)at the edge of one electrode,thereby achieving self-powered operation.At a wavelength of 1310 nm,the photodetector achieves a self-powered responsivity of 70 mA/W,which is among the highest for waveguide-integrated photodetectors.Additionally,due to the strong rectification effect of the Schottky junction,the photodetector exhibits an extremely low dark current of only 25 pA at−0.5 V bias voltage.The on/off ratios reach 2.63104 at 0 V and 4.13104 at−0.5 V bias.The self-powered response times were measured,showing fast response and recovery times of 160μs and 169μs,respectively.
基金supported by the National Key R&D Program of China(Nos.2019YFA0705000 and 2018YFB2201700)。
文摘The heterogeneous integration of silicon thin film and lithium niobate(LN) thin film combines both the advantages of the excellent electronics properties and mature micro-processing technology of Si and the excellent optical properties of LN,comprising a potentially promising material platform for photonic integrated circuits. Based on ion-implantation and wafer-bonding technologies, a 3 inch wafer-scale hybrid mono-crystalline Si/LN thin film was fabricated. A high-resolution transmission electron microscope was used to investigate the crystal-lattice arrangement of each layer and the interfaces. Only the H-atom-concentration distribution was investigated using secondary-ion mass spectroscopy. Highresolution X-ray-diffraction ω–2θ scanning was used to study the lattice properties of the Si/LN thin films. Raman measurements were performed to investigate the bulk Si and the Si thin films. Si strip-loaded straight waveguides were fabricated, and the optical propagation loss of a 5-μm-width waveguide was 6 d B/cm for the quasi-TE mode at1550 nm. The characterization results provide useful information regarding this hybrid material.
