Human action recognition(HAR)is crucial for the development of efficient computer vision,where bioinspired neuromorphic perception visual systems have emerged as a vital solution to address transmission bottlenecks ac...Human action recognition(HAR)is crucial for the development of efficient computer vision,where bioinspired neuromorphic perception visual systems have emerged as a vital solution to address transmission bottlenecks across sensor-processor interfaces.However,the absence of interactions among versatile biomimicking functionalities within a single device,which was developed for specific vision tasks,restricts the computational capacity,practicality,and scalability of in-sensor vision computing.Here,we propose a bioinspired vision sensor composed of a Ga N/Al N-based ultrathin quantum-disks-in-nanowires(QD-NWs)array to mimic not only Parvo cells for high-contrast vision and Magno cells for dynamic vision in the human retina but also the synergistic activity between the two cells for in-sensor vision computing.By simply tuning the applied bias voltage on each QD-NW-array-based pixel,we achieve two biosimilar photoresponse characteristics with slow and fast reactions to light stimuli that enhance the in-sensor image quality and HAR efficiency,respectively.Strikingly,the interplay and synergistic interaction of the two photoresponse modes within a single device markedly increased the HAR recognition accuracy from 51.4%to 81.4%owing to the integrated artificial vision system.The demonstration of an intelligent vision sensor offers a promising device platform for the development of highly efficient HAR systems and future smart optoelectronics.展开更多
In this work,we design and fabricate a deep ultraviolet(DUV)light-emitting array consisting of 10×10 micro-LEDs(μ-LEDs)with each device having 20μm in diameter.Strikingly,the array demonstrates a significant en...In this work,we design and fabricate a deep ultraviolet(DUV)light-emitting array consisting of 10×10 micro-LEDs(μ-LEDs)with each device having 20μm in diameter.Strikingly,the array demonstrates a significant enhancement of total light output power by nearly 52%at the injection current of 100 mA,in comparison to a conventional large LED chip whose emitting area is the same as the array.A much higher(~22%)peak external quantum efficiency,as well as a smaller efficiency droop forμ-LED array,was also achieved.The numerical calculation reveals that the performance boost can be attributed to the higher light extraction efficiency at the edge of eachμ-LED.Additionally,the far-field pattern measurement shows that theμ-LED array possesses a better forward directionality of emission.These findings shed light on the enhancement of the DUV LEDs performance and provide new insights in controlling the light behavior of theμ-LEDs.展开更多
In this paper,an efficient calculation method based on discrete Fourier transformation is developed for evaluating elastic load induced elastic deformation fields of film-substrate system.Making use of 2 D discrete Fo...In this paper,an efficient calculation method based on discrete Fourier transformation is developed for evaluating elastic load induced elastic deformation fields of film-substrate system.Making use of 2 D discrete Fourier transformation,the elastic fields induced by Hertz load is harvested in frequency domain,and the displacement and stress fields across the interface are enforced to satisfy the elasticity conditions for each Fourier modes.Given arbitrary distributed stress field at free surface plane of the three types of film-substrate systems,unique resultant elastic field within the can be harvested.Hertz load of half space,elastic film on elastic substrate,elastic film on rigid substrate system and elastic film-substrate system with three types of imperfect interface models are investigated:(1)the spring-like imperfect interface model which can be described as:u^fk|zf=-h-u^sk|z^s=0=KTσKZ and u^fz|zf=-h-u^sz|z^s=0=KNσZZ;(2)the dislocation-like interface model,where interface displacement and stress components relation can be described as:u^fi|zf=0=k^uiju^si|z^s=0 andσ^fiz|z^f=0=σ^siz|zf=0=σ^siz|z^s=0;(3)the force-like interface model,where interface displacement and stress components relation can be described as:u^fi|z^f=0=u^si|z^s=0 andσ^fiz|z^f=0=k^tijσ^siz|z^s=0 respectively.Finally,several simulation examples are performed for verification of the reliability and efficiency of the proposed semi-analytical methods.展开更多
The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug effi...The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power,which seriously hinder their commercialization.In this work,we design and report a tunnel-junctioncascaded(TJC)DUV LED,which enables multiple radiative recombinations within the active regions.Therefore,the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED.Correspondingly,the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25%at 60 m A.展开更多
Ⅱ-Ⅴsemiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices.However,solely relying on their intrinsic physical and material properties sometimes limits device fun...Ⅱ-Ⅴsemiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices.However,solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world.By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires,new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials.Herein,we combine high-crystal-quality lInitridle nanowires with amorphous molybdenum sulfides(a-MoS)to construct II.nitride/a-MoS_(x) core-shell nanostructures.Upon light ilumination,such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment,demonstrating a negative photoresponsivity of-100.42 mA W^(-1)under 254 nm ilumination,and a positive photoresponsivity of 29.5 mA W^(-1)under 365 nm ilumination.Density functional theory calculations reveal that the successful surface modifcation of the nanowires via a-MoS_(x)decoration accelerates the reaction process at the electrolyte/nanowire interface,leading to the generation of opposite photocurrent signals under different photon ilumination.Most importantly,such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition,showing great promise to build light-wavelength controllable sensing devices in the future.展开更多
Metal–semiconductor contacts play a pivotal role in controlling carrier transport in the fabrication of modern electronic devices.The exploration of van der Waals(vdW)metal contacts in semiconductor devices can poten...Metal–semiconductor contacts play a pivotal role in controlling carrier transport in the fabrication of modern electronic devices.The exploration of van der Waals(vdW)metal contacts in semiconductor devices can potentially mitigate Fermi-level pinning at the metal–semiconductor interface,with particular success in two-dimensional layered semiconductors,triggering unprecedented electrical and optical characteristics.In this work,for the first time,we report the direct integration of vdW metal contacts with bulk wide bandgap gallium nitride(GaN)by employing a dry transfer technique.High-angle annular dark-field scanning transmission electron microscopy explicitly illustrates the existence of a vdW gap between the metal electrode and GaN.Strikingly,compared with devices fabricated with electron beam-evaporated metal contacts,the vdW contact device exhibits a responsivity two orders of magnitude higher with a significantly suppressed dark current in the nanoampere range.Furthermore,by leveraging the high responsivity and persistent photoconductivity obtained from vdW contact devices,we demonstrate imaging,wireless optical communication,and neuromorphic computing functionality.The integration of vdW contacts with bulk semiconductors offers a promising architecture to overcome device fabrication challenges,forming nearly ideal metal–semiconductor contacts for future integrated electronics and optoelectronics.展开更多
基金funded by the National Natural Science Foundation of China(Grant Nos.62322410,52272168,624B2135,61804047)the Fundamental Research Funds for the Central Universities(No.WK2030000103)。
文摘Human action recognition(HAR)is crucial for the development of efficient computer vision,where bioinspired neuromorphic perception visual systems have emerged as a vital solution to address transmission bottlenecks across sensor-processor interfaces.However,the absence of interactions among versatile biomimicking functionalities within a single device,which was developed for specific vision tasks,restricts the computational capacity,practicality,and scalability of in-sensor vision computing.Here,we propose a bioinspired vision sensor composed of a Ga N/Al N-based ultrathin quantum-disks-in-nanowires(QD-NWs)array to mimic not only Parvo cells for high-contrast vision and Magno cells for dynamic vision in the human retina but also the synergistic activity between the two cells for in-sensor vision computing.By simply tuning the applied bias voltage on each QD-NW-array-based pixel,we achieve two biosimilar photoresponse characteristics with slow and fast reactions to light stimuli that enhance the in-sensor image quality and HAR efficiency,respectively.Strikingly,the interplay and synergistic interaction of the two photoresponse modes within a single device markedly increased the HAR recognition accuracy from 51.4%to 81.4%owing to the integrated artificial vision system.The demonstration of an intelligent vision sensor offers a promising device platform for the development of highly efficient HAR systems and future smart optoelectronics.
基金funded by the National Natural Science Foundation of China (Grant Nos. 52161145404, 61905236, 51961145110)the Fundamental Research Funds for the Central Universities (Grant No. WK2100230020)USTC Research Funds of the Double First-Class Initiative (Grant No. YD3480002002)
文摘In this work,we design and fabricate a deep ultraviolet(DUV)light-emitting array consisting of 10×10 micro-LEDs(μ-LEDs)with each device having 20μm in diameter.Strikingly,the array demonstrates a significant enhancement of total light output power by nearly 52%at the injection current of 100 mA,in comparison to a conventional large LED chip whose emitting area is the same as the array.A much higher(~22%)peak external quantum efficiency,as well as a smaller efficiency droop forμ-LED array,was also achieved.The numerical calculation reveals that the performance boost can be attributed to the higher light extraction efficiency at the edge of eachμ-LED.Additionally,the far-field pattern measurement shows that theμ-LED array possesses a better forward directionality of emission.These findings shed light on the enhancement of the DUV LEDs performance and provide new insights in controlling the light behavior of theμ-LEDs.
基金supported by the National Natural Science Foundation of China(Grants 11702023 and 11972081)。
文摘In this paper,an efficient calculation method based on discrete Fourier transformation is developed for evaluating elastic load induced elastic deformation fields of film-substrate system.Making use of 2 D discrete Fourier transformation,the elastic fields induced by Hertz load is harvested in frequency domain,and the displacement and stress fields across the interface are enforced to satisfy the elasticity conditions for each Fourier modes.Given arbitrary distributed stress field at free surface plane of the three types of film-substrate systems,unique resultant elastic field within the can be harvested.Hertz load of half space,elastic film on elastic substrate,elastic film on rigid substrate system and elastic film-substrate system with three types of imperfect interface models are investigated:(1)the spring-like imperfect interface model which can be described as:u^fk|zf=-h-u^sk|z^s=0=KTσKZ and u^fz|zf=-h-u^sz|z^s=0=KNσZZ;(2)the dislocation-like interface model,where interface displacement and stress components relation can be described as:u^fi|zf=0=k^uiju^si|z^s=0 andσ^fiz|z^f=0=σ^siz|zf=0=σ^siz|z^s=0;(3)the force-like interface model,where interface displacement and stress components relation can be described as:u^fi|z^f=0=u^si|z^s=0 andσ^fiz|z^f=0=k^tijσ^siz|z^s=0 respectively.Finally,several simulation examples are performed for verification of the reliability and efficiency of the proposed semi-analytical methods.
基金supported by the National Natural Science Foundation of China(No.61905236)the University of Science and Technology of China(No.KY2100000081)+2 种基金the Chinese Academy of Sciences(No.KJ2100230003)the Fundamental Research Funds for the Central Universities(No.WK2100230020)the USTC Research Funds of the Double First-Class Initiative(No.YD3480002002)。
文摘The Al Ga N-based deep ultraviolet(DUV)light-emitting diode(LED)is an alternative DUV light source to replace traditional mercury-based lamps.However,the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power,which seriously hinder their commercialization.In this work,we design and report a tunnel-junctioncascaded(TJC)DUV LED,which enables multiple radiative recombinations within the active regions.Therefore,the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED.Correspondingly,the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25%at 60 m A.
基金National Natural Science Foundation of China(Grant Nos.51727901,52161145404,61905236,51961145110)the Fundamental Research Funds for the Central Universities(Grant Nos.WK300000009,WK2100230020)。
文摘Ⅱ-Ⅴsemiconductor nanowires are indispensable building blocks for nanoscale electronic and optoelectronic devices.However,solely relying on their intrinsic physical and material properties sometimes limits device functionalities to meet the increasing demands in versatile and complex electronic world.By leveraging the distinctive nature of the one-dimensional geometry and large surface-to-volume ratio of the nanowires,new properties can be attained through monolithic integration of conventional nanowires with other easy-synthesized functional materials.Herein,we combine high-crystal-quality lInitridle nanowires with amorphous molybdenum sulfides(a-MoS)to construct II.nitride/a-MoS_(x) core-shell nanostructures.Upon light ilumination,such nanostructures exhibit striking spectrally distinctive photodetection characteristic in photoelectrochemical environment,demonstrating a negative photoresponsivity of-100.42 mA W^(-1)under 254 nm ilumination,and a positive photoresponsivity of 29.5 mA W^(-1)under 365 nm ilumination.Density functional theory calculations reveal that the successful surface modifcation of the nanowires via a-MoS_(x)decoration accelerates the reaction process at the electrolyte/nanowire interface,leading to the generation of opposite photocurrent signals under different photon ilumination.Most importantly,such polarity-switchable photoconductivity can be further tuned for multiple wavelength bands photodetection by simply adjusting the surrounding environment and/or tailoring the nanowire composition,showing great promise to build light-wavelength controllable sensing devices in the future.
基金funded by the National Natural Science Foundation of China(62322410,52272168,and 52161145404)。
文摘Metal–semiconductor contacts play a pivotal role in controlling carrier transport in the fabrication of modern electronic devices.The exploration of van der Waals(vdW)metal contacts in semiconductor devices can potentially mitigate Fermi-level pinning at the metal–semiconductor interface,with particular success in two-dimensional layered semiconductors,triggering unprecedented electrical and optical characteristics.In this work,for the first time,we report the direct integration of vdW metal contacts with bulk wide bandgap gallium nitride(GaN)by employing a dry transfer technique.High-angle annular dark-field scanning transmission electron microscopy explicitly illustrates the existence of a vdW gap between the metal electrode and GaN.Strikingly,compared with devices fabricated with electron beam-evaporated metal contacts,the vdW contact device exhibits a responsivity two orders of magnitude higher with a significantly suppressed dark current in the nanoampere range.Furthermore,by leveraging the high responsivity and persistent photoconductivity obtained from vdW contact devices,we demonstrate imaging,wireless optical communication,and neuromorphic computing functionality.The integration of vdW contacts with bulk semiconductors offers a promising architecture to overcome device fabrication challenges,forming nearly ideal metal–semiconductor contacts for future integrated electronics and optoelectronics.
