High mechanical robustness is essential to the material’s processibility for the applications in flexible and miniaturized electronics.As state-of-the-art room-temperature thermoelectric materials,Ag_(2)Se_(1–x)Te_(...High mechanical robustness is essential to the material’s processibility for the applications in flexible and miniaturized electronics.As state-of-the-art room-temperature thermoelectric materials,Ag_(2)Se_(1–x)Te_(x)alloys exhibit superior thermoelectric transport properties but their mechanical properties remain largely unexplored.Herein,we systematically investigate the mechanical and thermoelectric properties of a series of Ag_(2)Se_(1–x)Te_(x)materials.Among them,Ag_(2)Se_(0.9)Te_(0.1)shows robust mechanical properties including a large compression strain of(26.7±4.5)%,a high compression strength of(279.2±49)MPa,and an excellent fracture toughness of(4.5±0.6)MPa m^(1/2).These robust mechanical properties are ascribed to the dense dislocations as well as possible sub-grain rotations.Combined with the excellent thermoelectric figure of merit,z T of 0.78 at 300 K and 1.1 at 380 K,the Ag_(2)Se_(1–x)Te_(x)alloys are promising candidates for robust and efficient thermoelectric applications near room temperature.展开更多
Indium selenide(InSe)crystals are reported to show exceptional plasticity,a new property to twodimensional van der Waals(2D vdW)semiconductors.However,the correlation between plasticity and specific prototypes is uncl...Indium selenide(InSe)crystals are reported to show exceptional plasticity,a new property to twodimensional van der Waals(2D vdW)semiconductors.However,the correlation between plasticity and specific prototypes is unclear,and the understanding of detailed plastic deformation mechanisms is inadequate.Here three prototypes of InSe are predicted to be plastically deformable by calculation,and the plasticity of polymorphic crystals is verified by experiment.Moreover,distinct nanoindentation behaviors are seen on the cleavage and cross-section surfaces.The modulus and hardness of InSe are the lowest ones among a large variety of materials.The plastic deformation is further perceived from chemical interactions during the slip process.Particularly for the cross-layer slip,the initial In-Se bonds break while new In-In and Se-Se bonds are newly formed,maintaining a decent interaction strength.The remarkable plasticity and softness alongside the novel physical properties,endow InSe great promise for application in deformable and flexible electronics.展开更多
Flexible electronics ushers in a revolution to the electronics industry in the 21st century.Ideally,all components of a flexible electronic device including the functional component shall comply with the deformation t...Flexible electronics ushers in a revolution to the electronics industry in the 21st century.Ideally,all components of a flexible electronic device including the functional component shall comply with the deformation to ensure the structural and functional integrity,imposing a pressing need for developing roomtemperature strain-tolerant semiconductors.To this end,there is a long-standing material dilemma:inorganic semiconductors are typically brittle at room temperature except for size-induced flexibility;by contrast,organic semiconductors are intrinsically soft and flexible but the electrical performance is poor.This is why the discovery of bulk plasticity in Ag2S at room temperature and ZnS in darkness is groundbreaking in solving this long-standing material dilemma between the mechanical deformability and the electrical performance.The present review summarizes the background knowledge and latest advances in the emerging field of plastic inorganic semiconductors.At the outset,we argue that the plasticity of inorganic semiconductors is vital to strain tolerance of electronic devices,which has not been adequately emphasized.The mechanisms of plasticity are illustrated from the perspective of chemical bonding and dislocations.Plastic inorganic materials,for example,ionic crystals(insulators),ZnS in darkness,and Ag2S,are discussed in detail in terms of their prominent mechanical properties and potential applications.We conclude the article with several key scientific and technological questions to address in the future study.展开更多
基金supported by the National Natural Science Foundation of China(92463310,52373292)supported by the National Natural Science Foundation of China(52232010)supported by the Zhejiang Provincial Natural Science Foundation of China(LD25E020001)。
文摘High mechanical robustness is essential to the material’s processibility for the applications in flexible and miniaturized electronics.As state-of-the-art room-temperature thermoelectric materials,Ag_(2)Se_(1–x)Te_(x)alloys exhibit superior thermoelectric transport properties but their mechanical properties remain largely unexplored.Herein,we systematically investigate the mechanical and thermoelectric properties of a series of Ag_(2)Se_(1–x)Te_(x)materials.Among them,Ag_(2)Se_(0.9)Te_(0.1)shows robust mechanical properties including a large compression strain of(26.7±4.5)%,a high compression strength of(279.2±49)MPa,and an excellent fracture toughness of(4.5±0.6)MPa m^(1/2).These robust mechanical properties are ascribed to the dense dislocations as well as possible sub-grain rotations.Combined with the excellent thermoelectric figure of merit,z T of 0.78 at 300 K and 1.1 at 380 K,the Ag_(2)Se_(1–x)Te_(x)alloys are promising candidates for robust and efficient thermoelectric applications near room temperature.
基金the National Natural Science Foundation of China(T2122013,52232010)the Basic Research Project of the Shanghai Science and Technology Committee(20JC1415100)。
文摘Indium selenide(InSe)crystals are reported to show exceptional plasticity,a new property to twodimensional van der Waals(2D vdW)semiconductors.However,the correlation between plasticity and specific prototypes is unclear,and the understanding of detailed plastic deformation mechanisms is inadequate.Here three prototypes of InSe are predicted to be plastically deformable by calculation,and the plasticity of polymorphic crystals is verified by experiment.Moreover,distinct nanoindentation behaviors are seen on the cleavage and cross-section surfaces.The modulus and hardness of InSe are the lowest ones among a large variety of materials.The plastic deformation is further perceived from chemical interactions during the slip process.Particularly for the cross-layer slip,the initial In-Se bonds break while new In-In and Se-Se bonds are newly formed,maintaining a decent interaction strength.The remarkable plasticity and softness alongside the novel physical properties,endow InSe great promise for application in deformable and flexible electronics.
基金National Key Research and Development Program of China,Grant/Award Number:2018YFB0703600National Natural Science Foundation of China,Grant/Award Numbers:51625205,51961135106,91963208Shanghai Sailing Program,Grant/Award Number:18YF1426700。
文摘Flexible electronics ushers in a revolution to the electronics industry in the 21st century.Ideally,all components of a flexible electronic device including the functional component shall comply with the deformation to ensure the structural and functional integrity,imposing a pressing need for developing roomtemperature strain-tolerant semiconductors.To this end,there is a long-standing material dilemma:inorganic semiconductors are typically brittle at room temperature except for size-induced flexibility;by contrast,organic semiconductors are intrinsically soft and flexible but the electrical performance is poor.This is why the discovery of bulk plasticity in Ag2S at room temperature and ZnS in darkness is groundbreaking in solving this long-standing material dilemma between the mechanical deformability and the electrical performance.The present review summarizes the background knowledge and latest advances in the emerging field of plastic inorganic semiconductors.At the outset,we argue that the plasticity of inorganic semiconductors is vital to strain tolerance of electronic devices,which has not been adequately emphasized.The mechanisms of plasticity are illustrated from the perspective of chemical bonding and dislocations.Plastic inorganic materials,for example,ionic crystals(insulators),ZnS in darkness,and Ag2S,are discussed in detail in terms of their prominent mechanical properties and potential applications.We conclude the article with several key scientific and technological questions to address in the future study.
