Designing magnetic van der Waals(vdW)heterostructures by stacking two-dimensional(2D) magnetic materials with other 2D materials enables the investigation of 2D spintronics owing to the strong magnetic proximity effec...Designing magnetic van der Waals(vdW)heterostructures by stacking two-dimensional(2D) magnetic materials with other 2D materials enables the investigation of 2D spintronics owing to the strong magnetic proximity effect.Spin manipulation at the vdW interface can be achieved by stacking architectures and external stimuli,such as magnetic fields,electric fields,stress,and light.Moreover,elucidating the effects of magnetic interfacial interactions and related interlayer coupling is crucial for exploring practical spintronic applications of magnetic vdW hetero structures.In this review,vdW interlayer interactions are categorized into spin-orbit coupling,spin transfer torque,and spin-charge transfer,and the magnetic vdW hetero structures are classified into three categories:magnetic material/magnetic material,magnetic material/non-magnetic material,and magnetic material/ferroelectric material heterostructures.Subsequently,related interfacial interactions in magnetic vdW hetero structures are introduced,and the spin manipulation technique is discussed.Moreover,various applications of magnetic vdW hetero structures by modulating the electron spin are explored.Finally,emerging opportunities are highlighted,and a perspective on the future development of magnetic vdW heterostructures through delicate spin manipulation is provided.展开更多
Since the discovery of graphene,two-dimensional(2D)layered materials have attracted extensive attention owing to their unique properties and promising potential applications.In particular,van der Waals(vdW)heterostruc...Since the discovery of graphene,two-dimensional(2D)layered materials have attracted extensive attention owing to their unique properties and promising potential applications.In particular,van der Waals(vdW)heterostructures,artificially stacked with 2D materials,have provided an excellent platform to explore various applications and to unveil long-standing mysteries in quantum and condensed matter physics.Here,we discuss recent progress in novel classical and quantum phases in vdW heterostructures,emerging through thickness-dependent hexagonal boron nitride(h-BN)combined with graphene and transitional metal dichalcogenides.As a cornerstone of vdW heterostructures,the h-BN plays diverse roles,such as tunneling barriers,dielectric layers,clean substrates,and capping layers,to realize numerous intriguing devices:field-effect transistors,tunneling light-emitting diodes,resonant tunneling diodes,nonvolatile memories,Bose-Einstein condensation,topological insulators,and graphene-based superconductors.The vdW heterostructures with various roles of h-BN continue to enrich our knowledge for quantum physics and practical future device applications.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.12104050 and 62375018)the National Key Research and Development Program of China(No.2022YFA1203900)Beijing Institute of Technology Research Fund Program for Young Scholars
文摘Designing magnetic van der Waals(vdW)heterostructures by stacking two-dimensional(2D) magnetic materials with other 2D materials enables the investigation of 2D spintronics owing to the strong magnetic proximity effect.Spin manipulation at the vdW interface can be achieved by stacking architectures and external stimuli,such as magnetic fields,electric fields,stress,and light.Moreover,elucidating the effects of magnetic interfacial interactions and related interlayer coupling is crucial for exploring practical spintronic applications of magnetic vdW hetero structures.In this review,vdW interlayer interactions are categorized into spin-orbit coupling,spin transfer torque,and spin-charge transfer,and the magnetic vdW hetero structures are classified into three categories:magnetic material/magnetic material,magnetic material/non-magnetic material,and magnetic material/ferroelectric material heterostructures.Subsequently,related interfacial interactions in magnetic vdW hetero structures are introduced,and the spin manipulation technique is discussed.Moreover,various applications of magnetic vdW hetero structures by modulating the electron spin are explored.Finally,emerging opportunities are highlighted,and a perspective on the future development of magnetic vdW heterostructures through delicate spin manipulation is provided.
基金the Samsung Research Funding&Incubation Center of Samsung Electronics,under Project No.SRFC-MA1701-01.
文摘Since the discovery of graphene,two-dimensional(2D)layered materials have attracted extensive attention owing to their unique properties and promising potential applications.In particular,van der Waals(vdW)heterostructures,artificially stacked with 2D materials,have provided an excellent platform to explore various applications and to unveil long-standing mysteries in quantum and condensed matter physics.Here,we discuss recent progress in novel classical and quantum phases in vdW heterostructures,emerging through thickness-dependent hexagonal boron nitride(h-BN)combined with graphene and transitional metal dichalcogenides.As a cornerstone of vdW heterostructures,the h-BN plays diverse roles,such as tunneling barriers,dielectric layers,clean substrates,and capping layers,to realize numerous intriguing devices:field-effect transistors,tunneling light-emitting diodes,resonant tunneling diodes,nonvolatile memories,Bose-Einstein condensation,topological insulators,and graphene-based superconductors.The vdW heterostructures with various roles of h-BN continue to enrich our knowledge for quantum physics and practical future device applications.
