This article aims to explore the age hardening responses of both as-extruded and as-aged Mg-2.5 Sn-1.5 Ca-x Al alloys(x=2.0,4.0 and 9.0 wt%,termed TXA322,TXA324 and TXA329,respectively)through microstructural and mech...This article aims to explore the age hardening responses of both as-extruded and as-aged Mg-2.5 Sn-1.5 Ca-x Al alloys(x=2.0,4.0 and 9.0 wt%,termed TXA322,TXA324 and TXA329,respectively)through microstructural and mechanical characterization.Results indicate that grain size of as-extruded TXA322,TXA324 and TXA329 alloys were^16μm,~10μm and^12μm,respectively.A number of<a>and<c+a>dislocations were observed in all the as-extruded samples.Guinier–Preston(GP)zones were evidently identified in TXA322 alloy,while only a small number of Mg17 Al12 phases existed in both TXA324 and TXA329 alloys.An aging treatment facilitated the precipitation of a high number density of GP zones within the matrix of TXA322 alloy.In contrast,no obvious nano-precipitates were in as-aged TXA324 alloy.Numerous nano-Mg17 Al12 phases were formed through a following aging treatment in TXA329 alloy.In terms of mechanical properties,it is apparent that an increment in ultimate tensile strength of^46 MPa and^40 MPa was yielded in peak-aged TXA322 and TXA329 alloys,while no obvious variations in UTS were present in peak-aged TXA324 alloy,in comparison with the as-extruded counterparts.展开更多
Thanks to its single-atomic-layer structure,high carrier transport,and low power dissipation,carbon nanotube electronics is a leading candidate towards beyond-silicon technologies.Its low temperature fabrication proce...Thanks to its single-atomic-layer structure,high carrier transport,and low power dissipation,carbon nanotube electronics is a leading candidate towards beyond-silicon technologies.Its low temperature fabrication processes enable three-dimensional(3D)integration with logic and memory(static random access memory(SRAM),magnetic random access memory(MRAM),resistive random access memory(RRAM),etc.)to realize efficient near-memory computing.Importantly,carbon nanotube transistors require good thermal stability up to 400℃ processing temperature to be compatible with back-end-of-line(BEOL)process,which has not been previously addressed.In this work,we developed a robust wafer-scale process to build complementary carbon nanotube transistors with high thermal stability and good uniformity,where AlN was employed as electrostatic doping layer.The gate stack and passivation layer were optimized to realize high-quality interfaces.Specifically,we demonstrate 1-bit carbon nanotube full adders working under 250℃ with rail-to-rail outputs.展开更多
基金supported financially by the National Key Research and Development Program of China(Nos.2016YFB0301105 and 2016YFB0701200)the National Natural Science Foundation of China(Nos.51701211,51971053 and U1610253)+1 种基金the Fundamental Research Funds for the Central Universities(No.N170204011)the Fund of the state Key Laboratory of Solidification Processing in NPU(No.SKLSP201920).
文摘This article aims to explore the age hardening responses of both as-extruded and as-aged Mg-2.5 Sn-1.5 Ca-x Al alloys(x=2.0,4.0 and 9.0 wt%,termed TXA322,TXA324 and TXA329,respectively)through microstructural and mechanical characterization.Results indicate that grain size of as-extruded TXA322,TXA324 and TXA329 alloys were^16μm,~10μm and^12μm,respectively.A number of<a>and<c+a>dislocations were observed in all the as-extruded samples.Guinier–Preston(GP)zones were evidently identified in TXA322 alloy,while only a small number of Mg17 Al12 phases existed in both TXA324 and TXA329 alloys.An aging treatment facilitated the precipitation of a high number density of GP zones within the matrix of TXA322 alloy.In contrast,no obvious nano-precipitates were in as-aged TXA324 alloy.Numerous nano-Mg17 Al12 phases were formed through a following aging treatment in TXA329 alloy.In terms of mechanical properties,it is apparent that an increment in ultimate tensile strength of^46 MPa and^40 MPa was yielded in peak-aged TXA322 and TXA329 alloys,while no obvious variations in UTS were present in peak-aged TXA324 alloy,in comparison with the as-extruded counterparts.
基金the National Natural Science Foundation of China(No.61888102)the Beijing Municipal Science and Technology Commission(No.D171100006617002).
文摘Thanks to its single-atomic-layer structure,high carrier transport,and low power dissipation,carbon nanotube electronics is a leading candidate towards beyond-silicon technologies.Its low temperature fabrication processes enable three-dimensional(3D)integration with logic and memory(static random access memory(SRAM),magnetic random access memory(MRAM),resistive random access memory(RRAM),etc.)to realize efficient near-memory computing.Importantly,carbon nanotube transistors require good thermal stability up to 400℃ processing temperature to be compatible with back-end-of-line(BEOL)process,which has not been previously addressed.In this work,we developed a robust wafer-scale process to build complementary carbon nanotube transistors with high thermal stability and good uniformity,where AlN was employed as electrostatic doping layer.The gate stack and passivation layer were optimized to realize high-quality interfaces.Specifically,we demonstrate 1-bit carbon nanotube full adders working under 250℃ with rail-to-rail outputs.
