In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theo...In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theoretically studied.The heavily doping superjunction layer contributes to a low specific on-resistance,excellent electric field distribution,and quasi-unipolar drift current.The anode of the clamping diode is in floating contact with the P-shield.In the on-state,the potential of the P-shield is raised to the turn-on voltage of the clamping diode,which prevents the hole extraction below the N-type carrier storage layer(NCSL).Additionally,during the turn-off transient,once the clamping diode is turned on,it also promotes an additional hole extraction path.Furthermore,the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.展开更多
In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theore...In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.展开更多
基金the General Program of National Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475)the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-7)the Technology Innovation and Application Demonstration Key Project of Chongqing Municipality(cstc2019jszx-zdztzxX0005,cstc2020jscx-gksbX0011)。
文摘In this paper,a novel superjunction 4H-silicon carbide(4H-SiC)trench-gate insulated-gate bipolar transistor(IGBT)featuring an integrated clamping PN diode between the P-shield and emitter(TSD-IGBT)is designed and theoretically studied.The heavily doping superjunction layer contributes to a low specific on-resistance,excellent electric field distribution,and quasi-unipolar drift current.The anode of the clamping diode is in floating contact with the P-shield.In the on-state,the potential of the P-shield is raised to the turn-on voltage of the clamping diode,which prevents the hole extraction below the N-type carrier storage layer(NCSL).Additionally,during the turn-off transient,once the clamping diode is turned on,it also promotes an additional hole extraction path.Furthermore,the potential dropped at the semiconductor near the trench-gate oxide is effectively reduced in the off-state.
基金the General Program of Natural Science Foundation of Chongqing(CSTB2023NSCQ-MSX0475)the Doctoral Research Start-up Fund of Chongqing University of Posts and Telecommunications(A2023-70)。
文摘In this paper,a novel trench gate gallium nitride(GaN)insulated gate bipolar transistor(GaN IGBT),in which the collector is divided into multiple regions to control the hole injection efficiency,is designed and theoretically studied.The incorporation of a P+/P-multi-region alternating structure in the collector region mitigates hole injection within the collector region.When the device is in forward conduction,the conductivity modulation effect results in a reduced storage of carriers in the drift region.As a result,the number of carriers requiring extraction during device turn-off is minimized,leading to a faster turn-off speed.The results illustrate that the GaN IGBT with controlled hole injection efficiency(CEH GaN IGBT)exhibits markedly enhanced performance compared to conventional GaN IGBT,showing a remarkable 42.2%reduction in turn-off time and a notable 28.5%decrease in turn-off loss.
