We report on the first electrically pumped continuous-wave(CW) In As/Ga As quantum dot(QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga_(0.51)In_(0.49)P upper cladding layer and ...We report on the first electrically pumped continuous-wave(CW) In As/Ga As quantum dot(QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga_(0.51)In_(0.49)P upper cladding layer and an Al_(0.53)Ga_(0.47)As lower cladding layer was directly grown on Si by metal–organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper cladding layer grown at a low temperature of 550°C. Broad-stripe edge-emitting lasers with 2-mm cavity length and 15-μm stripe width were fabricated and characterized. Under CW operation, room-temperature lasing at ~1.3 μm has been achieved with a threshold density of 737 A∕cm^2 and a single-facet output power of 21.8 mW.展开更多
基金Beijing University of Posts and Telecommunications(BUPT)(IPOC2016ZT01)National Natural Science Foundation of China(NSFC)(61474008,61574019,61674020)+1 种基金International Science&Technology Cooperation Program of China(2011DFR11010)111 Project of China(B07005)
文摘We report on the first electrically pumped continuous-wave(CW) In As/Ga As quantum dot(QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga_(0.51)In_(0.49)P upper cladding layer and an Al_(0.53)Ga_(0.47)As lower cladding layer was directly grown on Si by metal–organic chemical vapor deposition. It demonstrates the postgrowth annealing effect on the QDs was relieved enough with the GaInP upper cladding layer grown at a low temperature of 550°C. Broad-stripe edge-emitting lasers with 2-mm cavity length and 15-μm stripe width were fabricated and characterized. Under CW operation, room-temperature lasing at ~1.3 μm has been achieved with a threshold density of 737 A∕cm^2 and a single-facet output power of 21.8 mW.
