The trade-off relation between the strength and the electrical conductivity has been a Iong-standing dilemma in metallic materials. In the study, three key principles, i.e.elongated grains, sharp texture and nano-scal...The trade-off relation between the strength and the electrical conductivity has been a Iong-standing dilemma in metallic materials. In the study, three key principles, i.e.elongated grains, sharp texture and nano-scale precipitates, were presented for preparing Al wire with high strength and high electrical conductivity based on the specially designed experiments for breaking the mutually exclusive relation between the strength and the electrical conductivity. The results show that the elongated grains could lead to a higher electrical conductivity in Al wire without sacrificing the strength;while, the <111> sharp texture can efficiently strengthen the Al wire without influencing the electrical conductivity. Furthermore, nano-scale precipitates with proper size can simultaneously improve the strength and electrical conductivity of Al alloy wire. Under the guidance of the above three key principles, Al wires with high strength and high conductivity were prepared.展开更多
Aiming at improving the performance/cost ratio in grain boundary diffusion process(GBDP),the critical RE containing Pr-Al-Cu alloy,less expensive RE containing La-Al-Cu alloy and non-RE Al-Cu alloy were employed as th...Aiming at improving the performance/cost ratio in grain boundary diffusion process(GBDP),the critical RE containing Pr-Al-Cu alloy,less expensive RE containing La-Al-Cu alloy and non-RE Al-Cu alloy were employed as the diffusion sources.The preliminary results show that the coercivity was successfully enhanced from 1000 kA/m to 1695,1156 and 1125 kA/m by Pr70Al20Cu10,La70Al20Cu10 and Al75Cu25(at.%) alloys diffusion,respectively,due to the formation of(Nd,Pr)-Fe-B,La2 O3 and c-Nd2 O3 phases respectively,after diffusion.It is also found that the corrosion resistance can be improved by Al-Cu diffusion due to the positive effects of Al and Cu elements in grain boundary.The present results demonstrated the various coercivity enhancement mechanisms for the GBDP based on different diffusion sources,and provided feasible solutions for cost reduction of GBDP and NdFeB production by saving RE resource.展开更多
The evolution of microstructure in the drawing process of commercially pure aluminum wire （CPAW） does not only depend on the nature of materials, but also on the stress profile. In this study, the effect of stress p...The evolution of microstructure in the drawing process of commercially pure aluminum wire （CPAW） does not only depend on the nature of materials, but also on the stress profile. In this study, the effect of stress profile on the texture evolution of the CPAW was systematically investigated by combining the numerical simulation and the microstructure observation. The results show that the tensile stress at the wire center promotes the formation of 〈111〉 texture, whereas the shear stress nearby the rim makes little contribution to the texture formation. Therefore, the 〈111 〉 texture at the wire center is stronger than that in the surface layer, which also results in a higher microhardness at the center of the CPAW under axial loading.2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science ＆ Technology.展开更多
The material and electrical properties of HfO 2 hi gh-k gate dielectric are reported.In the first part,the band alignment of H fO 2 and (HfO 2) x(Al 2O 3) 1-x to (100)Si substrate and thei r thermal stability are stud...The material and electrical properties of HfO 2 hi gh-k gate dielectric are reported.In the first part,the band alignment of H fO 2 and (HfO 2) x(Al 2O 3) 1-x to (100)Si substrate and thei r thermal stability are studied by X-ray photoelectron spectroscopy and TEM.The energy gap of (HfO 2) x(Al 2O 3) 1-x,the valence band offset, and the conduction band offset between (HfO 2) x(Al 2O 3) 1-x and the Si substrate as functions of x are obtained based on the XPS results .Our XPS results also demonstrate that both the thermal stability and the resist ance to oxygen diffusion of HfO 2 are improved by adding Al to form Hf aluminat es.In the second part,a thermally stable and high quality HfN/HfO 2 gate stack is reported.Negligible changes in equivalent oxide thickness (EOT),gate leakage, and work function (close to Si mid-gap) of HfN/HfO 2 gate stack are demonstrat ed even after 1000℃ post-metal annealing(PMA),which is attributed to the super ior oxygen diffusion barrier of HfN as well as the thermal stability of the HfN/ HfO 2 interface.Therefore,even without surface nitridation prior to HfO 2 depo sition,the EOT of HfN/HfO 2 gate stack has been successfully scaled down to les s than 1nm after 1000℃ PMA with excellent leakage and long-term reliability.T he last part demonstrates a novel replacement gate process employing a HfN dummy gate and sub-1nm EOT HfO 2 gate dielectric.The excellent thermal stability of the HfN/HfO 2 gate stack enables its use in high temperature CMOS processes.Th e replacement of HfN with other metal gate materials with work functions adequat e for n- and p-MOS is facilitated by a high etch selectivity of HfN with respe ct to HfO 2,without any degradation to the EOT,gate leakage,or TDDB characteris tics of HfO 2.展开更多
The influence of the surface galvanic effects of 1Cr13 SS during cavitation damage has been investigated in NaCl solutions. The results show that the solution concentration and area ratio of bubble unacted surface to ...The influence of the surface galvanic effects of 1Cr13 SS during cavitation damage has been investigated in NaCl solutions. The results show that the solution concentration and area ratio of bubble unacted surface to the bubble-acted surface greatly influence the cavitation damage of the alloy. The surface galvanic effects can speed up the dissolution rate of the alloy, and the mass loss per area of the alloy increases linearly with the area ratio of bubble unacted surface to the bubble acted surface of the alloy.展开更多
基金financially supported by the State Grid Corporation of China (No. 52110416001z)the National Natural Science Foundation of China (No. 51331007)
文摘The trade-off relation between the strength and the electrical conductivity has been a Iong-standing dilemma in metallic materials. In the study, three key principles, i.e.elongated grains, sharp texture and nano-scale precipitates, were presented for preparing Al wire with high strength and high electrical conductivity based on the specially designed experiments for breaking the mutually exclusive relation between the strength and the electrical conductivity. The results show that the elongated grains could lead to a higher electrical conductivity in Al wire without sacrificing the strength;while, the <111> sharp texture can efficiently strengthen the Al wire without influencing the electrical conductivity. Furthermore, nano-scale precipitates with proper size can simultaneously improve the strength and electrical conductivity of Al alloy wire. Under the guidance of the above three key principles, Al wires with high strength and high conductivity were prepared.
基金supported financially by the National Natural Science Foundation of China(No.51774146)the Guangzhou Municipal Science and Technology Program(Nos.201605120111410 and 201804020032)the Guangdong Key Laboratory of Rare Earth Development and Applications(No.XTKY-201801)。
文摘Aiming at improving the performance/cost ratio in grain boundary diffusion process(GBDP),the critical RE containing Pr-Al-Cu alloy,less expensive RE containing La-Al-Cu alloy and non-RE Al-Cu alloy were employed as the diffusion sources.The preliminary results show that the coercivity was successfully enhanced from 1000 kA/m to 1695,1156 and 1125 kA/m by Pr70Al20Cu10,La70Al20Cu10 and Al75Cu25(at.%) alloys diffusion,respectively,due to the formation of(Nd,Pr)-Fe-B,La2 O3 and c-Nd2 O3 phases respectively,after diffusion.It is also found that the corrosion resistance can be improved by Al-Cu diffusion due to the positive effects of Al and Cu elements in grain boundary.The present results demonstrated the various coercivity enhancement mechanisms for the GBDP based on different diffusion sources,and provided feasible solutions for cost reduction of GBDP and NdFeB production by saving RE resource.
基金financially supported by the State Grid Corporation of China (No. 52110416001z)the National Natural Science Foundation of China (No. 51331007)
文摘The evolution of microstructure in the drawing process of commercially pure aluminum wire （CPAW） does not only depend on the nature of materials, but also on the stress profile. In this study, the effect of stress profile on the texture evolution of the CPAW was systematically investigated by combining the numerical simulation and the microstructure observation. The results show that the tensile stress at the wire center promotes the formation of 〈111〉 texture, whereas the shear stress nearby the rim makes little contribution to the texture formation. Therefore, the 〈111 〉 texture at the wire center is stronger than that in the surface layer, which also results in a higher microhardness at the center of the CPAW under axial loading.2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science ＆ Technology.
文摘The material and electrical properties of HfO 2 hi gh-k gate dielectric are reported.In the first part,the band alignment of H fO 2 and (HfO 2) x(Al 2O 3) 1-x to (100)Si substrate and thei r thermal stability are studied by X-ray photoelectron spectroscopy and TEM.The energy gap of (HfO 2) x(Al 2O 3) 1-x,the valence band offset, and the conduction band offset between (HfO 2) x(Al 2O 3) 1-x and the Si substrate as functions of x are obtained based on the XPS results .Our XPS results also demonstrate that both the thermal stability and the resist ance to oxygen diffusion of HfO 2 are improved by adding Al to form Hf aluminat es.In the second part,a thermally stable and high quality HfN/HfO 2 gate stack is reported.Negligible changes in equivalent oxide thickness (EOT),gate leakage, and work function (close to Si mid-gap) of HfN/HfO 2 gate stack are demonstrat ed even after 1000℃ post-metal annealing(PMA),which is attributed to the super ior oxygen diffusion barrier of HfN as well as the thermal stability of the HfN/ HfO 2 interface.Therefore,even without surface nitridation prior to HfO 2 depo sition,the EOT of HfN/HfO 2 gate stack has been successfully scaled down to les s than 1nm after 1000℃ PMA with excellent leakage and long-term reliability.T he last part demonstrates a novel replacement gate process employing a HfN dummy gate and sub-1nm EOT HfO 2 gate dielectric.The excellent thermal stability of the HfN/HfO 2 gate stack enables its use in high temperature CMOS processes.Th e replacement of HfN with other metal gate materials with work functions adequat e for n- and p-MOS is facilitated by a high etch selectivity of HfN with respe ct to HfO 2,without any degradation to the EOT,gate leakage,or TDDB characteris tics of HfO 2.
文摘The influence of the surface galvanic effects of 1Cr13 SS during cavitation damage has been investigated in NaCl solutions. The results show that the solution concentration and area ratio of bubble unacted surface to the bubble-acted surface greatly influence the cavitation damage of the alloy. The surface galvanic effects can speed up the dissolution rate of the alloy, and the mass loss per area of the alloy increases linearly with the area ratio of bubble unacted surface to the bubble acted surface of the alloy.
