The basic design principles and parameters of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) are reviewed.Furthermore new research directions,devices and applications suited for QWIPs are discussed.These incl...The basic design principles and parameters of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) are reviewed.Furthermore new research directions,devices and applications suited for QWIPs are discussed.These include monolithic integration of QWIPs with GaAs based electronic and optoelectronic devices,high frequency and high speed QWIPs and applications,multicolor and multispectral detectors,and p-type QWIPs.展开更多
We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabri...We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.展开更多
文摘The basic design principles and parameters of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) are reviewed.Furthermore new research directions,devices and applications suited for QWIPs are discussed.These include monolithic integration of QWIPs with GaAs based electronic and optoelectronic devices,high frequency and high speed QWIPs and applications,multicolor and multispectral detectors,and p-type QWIPs.
基金supported in part by NSERC. HCL thanks the support by the National Ma jor Basic Research Pro jects (2011CB925603)Shanghai Municipal Ma jor Basic Research Pro ject (09DJ1400102)
文摘We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.
