We developed high-performance flexible oxide thin-film transistors(TFTs)using SnO_(2) semiconductor and high-k ZrO_(2) dielectric,both formed through combustion-assisted sol-gel processes.This method involves the exot...We developed high-performance flexible oxide thin-film transistors(TFTs)using SnO_(2) semiconductor and high-k ZrO_(2) dielectric,both formed through combustion-assisted sol-gel processes.This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating.The combustion ZrO_(2) films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network,which contributes to the low leakage current and frequency-independent dielectric properties.The ZrO_(2)/SnO_(2) TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics,including a field-effectmobility of 26.16 cm^(2)/Vs,a subthreshold swing of 0.125 V/dec,and an on/off current ratio of 1.13×10^(6) at a low operating voltage of 3 V.Furthermore,we demonstrated flexible ZrO_(2)/SnO_(2) TFTs with robust mechanical stability,capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm,achieved by scaling down the device dimensions.展开更多
基金supported by the National Research Foundation of Korea(NRF)funded by the Ministry of Science and ICT(MSIT)(RS-2024-00428887 and 2022M3D1A2083618).
文摘We developed high-performance flexible oxide thin-film transistors(TFTs)using SnO_(2) semiconductor and high-k ZrO_(2) dielectric,both formed through combustion-assisted sol-gel processes.This method involves the exothermic reaction of fuels and oxidizers to produce high-quality oxide films without extensive external heating.The combustion ZrO_(2) films were revealed to have an amorphous structure with a higher proportion of oxygen corresponding to the oxide network,which contributes to the low leakage current and frequency-independent dielectric properties.The ZrO_(2)/SnO_(2) TFTs fabricated on flexible substrates using combustion synthesis exhibited excellent electrical characteristics,including a field-effectmobility of 26.16 cm^(2)/Vs,a subthreshold swing of 0.125 V/dec,and an on/off current ratio of 1.13×10^(6) at a low operating voltage of 3 V.Furthermore,we demonstrated flexible ZrO_(2)/SnO_(2) TFTs with robust mechanical stability,capable of withstanding 5000 cycles of bending tests at a bending radius of 2.5 mm,achieved by scaling down the device dimensions.
