In_(2)O_(3)-based TFTs have garnered widespread attention due to their higher mobilities than amorphous silicon.Previous studies have indicated that rare earth doping can enhance the NBIS stability of TFTs,but this of...In_(2)O_(3)-based TFTs have garnered widespread attention due to their higher mobilities than amorphous silicon.Previous studies have indicated that rare earth doping can enhance the NBIS stability of TFTs,but this often results in a decrease in mobility.To improve the mobility of TFTs while maintaining stability,we incorporated Mo and Pr into In_(2)O_(3),fabricating InPrMoO TFTs.Mo doping is believed to positively affect In_(2)O_(3)through reducing porosity and defects.Pr doping has been proposed as a potential strategy to enhance the NBIS stability of In_(2)O_(3).A nondestructiveμPCD detector was employed to characterize the local defect states of the film.X-ray photoelectron spectroscopy data demonstrate that the InPrMoO film with 0.8 mol%Mo doping has the lowest concentration of oxygen vacancies(Vo).TFTs fabricated using the InPrMoO film doped with an optimized concentration of 0.8 mol%Mo exhibit superior electrical properties(μ_(sat)=12.2 cm^(2)/V·s,V_(th)=1.6 V,I_(on)/I_(off)=2.17×10^(6),and SS=0.47 V/dec)and the minimalΔVth under NBS/PBS/NBIS=−0.65 V/0.79 V/−0.70 V.The synergistic effect of Mo and Pr doping has led to enhanced film uniformity and density,consequently improving the mobility and stability of the TFTs.To tackle the challenge of predicting optimal process parameters,a multiobjective prediction model integrating physical models and machine learning was developed.The predicted optimal parameters(0.78 mol%Mo doping,381℃ annealing)were experimentally verified,yielding<5%relative error in most film properties.The prepared TFT exhibits a mobility of 13.5 cm^(2)/V·s(10.6%improvement),an on/off current ratio of 3.82�106,and an SS of 0.40 V/dec,demonstrating superior efficiency over conventional trial-and-error methods.展开更多
基金supported by CUI CAN Program of Guangdong Province(CC/XM-202401ZJ0201)National Natural Science Foundation of China(Grant 62174057)+4 种基金Guangdong Natural Science Foundation(2024A1515012216 and 2023A1515011026)Educational Commission of Guangdong Province(Grant 2022ZDZX1002)State Key Lab of Luminescent Materials and Devices(Skllmd-2024-05)Southwest Institute of Technology and Engineering Cooperation Fund(HDHDW59A020301)Guangdong Basic Research Center of Excellence for Energy and Information Polymer Materials.
文摘In_(2)O_(3)-based TFTs have garnered widespread attention due to their higher mobilities than amorphous silicon.Previous studies have indicated that rare earth doping can enhance the NBIS stability of TFTs,but this often results in a decrease in mobility.To improve the mobility of TFTs while maintaining stability,we incorporated Mo and Pr into In_(2)O_(3),fabricating InPrMoO TFTs.Mo doping is believed to positively affect In_(2)O_(3)through reducing porosity and defects.Pr doping has been proposed as a potential strategy to enhance the NBIS stability of In_(2)O_(3).A nondestructiveμPCD detector was employed to characterize the local defect states of the film.X-ray photoelectron spectroscopy data demonstrate that the InPrMoO film with 0.8 mol%Mo doping has the lowest concentration of oxygen vacancies(Vo).TFTs fabricated using the InPrMoO film doped with an optimized concentration of 0.8 mol%Mo exhibit superior electrical properties(μ_(sat)=12.2 cm^(2)/V·s,V_(th)=1.6 V,I_(on)/I_(off)=2.17×10^(6),and SS=0.47 V/dec)and the minimalΔVth under NBS/PBS/NBIS=−0.65 V/0.79 V/−0.70 V.The synergistic effect of Mo and Pr doping has led to enhanced film uniformity and density,consequently improving the mobility and stability of the TFTs.To tackle the challenge of predicting optimal process parameters,a multiobjective prediction model integrating physical models and machine learning was developed.The predicted optimal parameters(0.78 mol%Mo doping,381℃ annealing)were experimentally verified,yielding<5%relative error in most film properties.The prepared TFT exhibits a mobility of 13.5 cm^(2)/V·s(10.6%improvement),an on/off current ratio of 3.82�106,and an SS of 0.40 V/dec,demonstrating superior efficiency over conventional trial-and-error methods.
