A novel O2 plasma-based digital etching technology for p-GaN/AlGaN structures without any etch-stop layer was investigated using an inductively coupled plasma(ICP)etcher,with 100 W ICP power and 40 W rf bias power.Und...A novel O2 plasma-based digital etching technology for p-GaN/AlGaN structures without any etch-stop layer was investigated using an inductively coupled plasma(ICP)etcher,with 100 W ICP power and 40 W rf bias power.Under 40 sccm O2 flow and 3 min oxidation time,the p-GaN etch depth was 3.62 nm per circle.The surface roughness improved from 0.499 to 0.452 nm after digital etching,meaning that no observable damages were caused by this process.Compared to the dry etch only methods with Cl2/Ar/O2 or BCl3/SF6 plasma,this technique smoothed the surface and could efficiently control the etch depth due to its self-limiting characteristic.Furthermore,compared to other digital etching processes with an etch-stop layer,this approach was performed using ICP etcher and less demanding on the epitaxial growth.It was proved to be effective in precisely controlling p-GaN etch depth and surface damages required for high performance p-GaN gate high electron mobility transistors.展开更多
With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material para...With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer.展开更多
基金Supported by the Guangdong Science and Technology Department(Grant Nos.2019B010128001 and 2019B010142001)the Shenzhen Municipal Council of Science and Innovation(Grant Nos.JCYJ20180305180619573 and JCYJ20170412153356899)the National Natural Science Foundation of China(Grant No.61704004)。
文摘A novel O2 plasma-based digital etching technology for p-GaN/AlGaN structures without any etch-stop layer was investigated using an inductively coupled plasma(ICP)etcher,with 100 W ICP power and 40 W rf bias power.Under 40 sccm O2 flow and 3 min oxidation time,the p-GaN etch depth was 3.62 nm per circle.The surface roughness improved from 0.499 to 0.452 nm after digital etching,meaning that no observable damages were caused by this process.Compared to the dry etch only methods with Cl2/Ar/O2 or BCl3/SF6 plasma,this technique smoothed the surface and could efficiently control the etch depth due to its self-limiting characteristic.Furthermore,compared to other digital etching processes with an etch-stop layer,this approach was performed using ICP etcher and less demanding on the epitaxial growth.It was proved to be effective in precisely controlling p-GaN etch depth and surface damages required for high performance p-GaN gate high electron mobility transistors.
文摘With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer.
