Two dimensional nanomaterials, specifically graphene, can play a significant role in various photonic and electronic devices. This is especially true in handling the enormous heat in high density electronics and in no...Two dimensional nanomaterials, specifically graphene, can play a significant role in various photonic and electronic devices. This is especially true in handling the enormous heat in high density electronics and in nonlinear optics when using high power lasers. To model these systems it is important to know the thermal-optical properties of graphene. In this paper, we report on the thermal and optical linear and nonlinear properties of graphene materials using Z-scan system. In particular, we explore the thermo-optical properties of graphene, with and without gold nanorods （AuNRs）. The obtained results illustrate that the addition of gold nanorods causes a significant change in thermal nonlinear refractive index coefficients of graphene, due to the plasmonic enhancements.展开更多
GeSn lasers enable the monolithic integration of lasers on the Si platform using all-group-Ⅳ direct-bandgap material.The GeSn laser study recently moved from optical pumping into electrical injection.In this work,we ...GeSn lasers enable the monolithic integration of lasers on the Si platform using all-group-Ⅳ direct-bandgap material.The GeSn laser study recently moved from optical pumping into electrical injection.In this work,we present explorative investigations of GeSn heterostructure laser diodes with various layer thicknesses and material compositions.Cap layer material was studied by using Si_(0.03)Ge_(0.89)Sn_(0.08) and Ge_(0.95)Sn_(0.05),and cap layer total thickness was also compared.The 190 nm SiGeSn-cap device had threshold of 0.6 kA/cm^(2) at 10 K and a maximum operating temperature(T_(max)) of 100 K,compared to 1.4 kA/cm^(2) and 50 K from 150 nm SiGeSn-cap device,respectively.Furthermore,the 220 nm GeSn-cap device had 10 K threshold at 2.4 kA/cm^(2) and T_(max) at 90 K,i.e.,higher threshold and lower maximal operation temperature compared to the SiGeSn cap layer,indicating that enhanced electron confinement using SiGeSn can reduce the threshold considerably.The study of the active region material showed that device gain region using Ge_(0.87)Sn_(0.13) had a higher threshold and lower T_(max),compared to Ge_(0.89)Sn_(0.11).The performance was affected by the metal absorption,free carrier absorption,and possibly defect density level.The maximum peak wavelength was measured as 2682 nm at 90 K by using Ge_(0.87)Sn_(0.13) in gain regions.The investigations provide directions to the future GeSn laser diode designs toward the full integration of group-Ⅳ photonics on a Si platform.展开更多
文摘Two dimensional nanomaterials, specifically graphene, can play a significant role in various photonic and electronic devices. This is especially true in handling the enormous heat in high density electronics and in nonlinear optics when using high power lasers. To model these systems it is important to know the thermal-optical properties of graphene. In this paper, we report on the thermal and optical linear and nonlinear properties of graphene materials using Z-scan system. In particular, we explore the thermo-optical properties of graphene, with and without gold nanorods （AuNRs）. The obtained results illustrate that the addition of gold nanorods causes a significant change in thermal nonlinear refractive index coefficients of graphene, due to the plasmonic enhancements.
基金Air Force Office of Scientific Research (FA9550-18-1-0045, FA9550-19-1-0341, FA9550-21-1-0347)。
文摘GeSn lasers enable the monolithic integration of lasers on the Si platform using all-group-Ⅳ direct-bandgap material.The GeSn laser study recently moved from optical pumping into electrical injection.In this work,we present explorative investigations of GeSn heterostructure laser diodes with various layer thicknesses and material compositions.Cap layer material was studied by using Si_(0.03)Ge_(0.89)Sn_(0.08) and Ge_(0.95)Sn_(0.05),and cap layer total thickness was also compared.The 190 nm SiGeSn-cap device had threshold of 0.6 kA/cm^(2) at 10 K and a maximum operating temperature(T_(max)) of 100 K,compared to 1.4 kA/cm^(2) and 50 K from 150 nm SiGeSn-cap device,respectively.Furthermore,the 220 nm GeSn-cap device had 10 K threshold at 2.4 kA/cm^(2) and T_(max) at 90 K,i.e.,higher threshold and lower maximal operation temperature compared to the SiGeSn cap layer,indicating that enhanced electron confinement using SiGeSn can reduce the threshold considerably.The study of the active region material showed that device gain region using Ge_(0.87)Sn_(0.13) had a higher threshold and lower T_(max),compared to Ge_(0.89)Sn_(0.11).The performance was affected by the metal absorption,free carrier absorption,and possibly defect density level.The maximum peak wavelength was measured as 2682 nm at 90 K by using Ge_(0.87)Sn_(0.13) in gain regions.The investigations provide directions to the future GeSn laser diode designs toward the full integration of group-Ⅳ photonics on a Si platform.
