Memristor-based architectures hold great potential for future computing systems.However,the reliance on monotonous electrical input to regulate resistance limits the possibilities for high-density storage and multifun...Memristor-based architectures hold great potential for future computing systems.However,the reliance on monotonous electrical input to regulate resistance limits the possibilities for high-density storage and multifunctional integration.In this work,we report a multi-functional memristor based on optical and electrical modulation,utilizing double perovskite oxide materials.La_(2)CoMn_(1-x)Cr_(x)O_(6)(x=0,0.15,0.25,0.35)films were fabricated on a LaNiO_(3)/SiO_(2)/Si conductive heterojunction via the sol-gel method.Among the different Cr doping concentrations,x=0.25(25%Cr)was found to be the optimal condition,enhancing both surface quality and resistive switching(RS)performance in the La_(2)CoMn_(1-x)Cr_(x)O_(6)-based films.For the first time,ten distinct resistance states were achieved in an Au/La_(2)CoMn_(0.75)Cr_(0.25)O_(6)(Cr-LCMO-25)/LaNiO_(3)/SiO_(2)/Si device,driven by varying light intensity(650 nm).These states remained stable for 12,000 s and over 450 cycles,demonstrating excellent multilevel RS memory performance in the Cr-LCMO-25-based device.The RS behavior followed the oxygen vacancy(OV)-controlled space charge-limited current model.Cr doping increased the OV concentration,which in turn enhanced the RS behavior.Additionally,photoinduced carriers at the Au/Cr-LCMO-25 interface modulated the Schottky-like barrier,further influencing the multilevel RS behavior.Importantly,complex logic operations,including AND,OR,NOT,and XNOR,were successfully performed using both electrical and optical inputs.This study offers a promising approach to increase memory density,simplify logic circuits,and create lead-free double perovskite-based multifunctional memristors.展开更多
Photo-stimuli responsive materials show great potential in the fields of information encryption and storage due to their distinctive spatial or temporal color changes.However,the conventional single or multi-color sta...Photo-stimuli responsive materials show great potential in the fields of information encryption and storage due to their distinctive spatial or temporal color changes.However,the conventional single or multi-color static outputs by light stimulus difficulty meet practical requirements for high-security optical storage technologies.Here,a novel dynamic irradiation-responsive phosphor of Na_(2)Ba_(2)Si_(2)O_(7):Eu is demonstrated,exhibiting high storage stability and convenient readout behaviors.The inherent Eu^(2+)luminescence can be dynamically tuned,instantly read out,and conveniently erased by controlling irradiation duration of a portable diode laser(365 nm).The modulation mechanism is unraveled by optically induced oxidation reactions of Eu^(2+)→Eu^(3+)and defects as killer centers.The excellent luminescence modulation degree(ΔR_(t)=89.5%)and the accompanying larger color contrast enable the creation of invisible optical codes with multi-level encryption in bright or dark field.These results indicate potential applications of Na_(2)Ba_(2)Si_(2)O_(7):-based materials in information encryption and invisible optical storage,and are expected to expand more investigations on optically induced PL modulation behaviors based on mixed valences and defects.展开更多
基金supported by the National Natural Science Foundation of China(Nos.12104106,12464012,12464028,12164005,12074382,11804062,and 11474285)the Natural Science Foundation of Guangxi Zhuang Autonomous Region(No.2021GXNSFAA220044).
文摘Memristor-based architectures hold great potential for future computing systems.However,the reliance on monotonous electrical input to regulate resistance limits the possibilities for high-density storage and multifunctional integration.In this work,we report a multi-functional memristor based on optical and electrical modulation,utilizing double perovskite oxide materials.La_(2)CoMn_(1-x)Cr_(x)O_(6)(x=0,0.15,0.25,0.35)films were fabricated on a LaNiO_(3)/SiO_(2)/Si conductive heterojunction via the sol-gel method.Among the different Cr doping concentrations,x=0.25(25%Cr)was found to be the optimal condition,enhancing both surface quality and resistive switching(RS)performance in the La_(2)CoMn_(1-x)Cr_(x)O_(6)-based films.For the first time,ten distinct resistance states were achieved in an Au/La_(2)CoMn_(0.75)Cr_(0.25)O_(6)(Cr-LCMO-25)/LaNiO_(3)/SiO_(2)/Si device,driven by varying light intensity(650 nm).These states remained stable for 12,000 s and over 450 cycles,demonstrating excellent multilevel RS memory performance in the Cr-LCMO-25-based device.The RS behavior followed the oxygen vacancy(OV)-controlled space charge-limited current model.Cr doping increased the OV concentration,which in turn enhanced the RS behavior.Additionally,photoinduced carriers at the Au/Cr-LCMO-25 interface modulated the Schottky-like barrier,further influencing the multilevel RS behavior.Importantly,complex logic operations,including AND,OR,NOT,and XNOR,were successfully performed using both electrical and optical inputs.This study offers a promising approach to increase memory density,simplify logic circuits,and create lead-free double perovskite-based multifunctional memristors.
基金the National Natural Science Foundation of China(Nos.52062042 and 12164005)the Central Government Guidance Funds for Local Scientific and Technological Development of China(No.Guike ZY22096024).
文摘Photo-stimuli responsive materials show great potential in the fields of information encryption and storage due to their distinctive spatial or temporal color changes.However,the conventional single or multi-color static outputs by light stimulus difficulty meet practical requirements for high-security optical storage technologies.Here,a novel dynamic irradiation-responsive phosphor of Na_(2)Ba_(2)Si_(2)O_(7):Eu is demonstrated,exhibiting high storage stability and convenient readout behaviors.The inherent Eu^(2+)luminescence can be dynamically tuned,instantly read out,and conveniently erased by controlling irradiation duration of a portable diode laser(365 nm).The modulation mechanism is unraveled by optically induced oxidation reactions of Eu^(2+)→Eu^(3+)and defects as killer centers.The excellent luminescence modulation degree(ΔR_(t)=89.5%)and the accompanying larger color contrast enable the creation of invisible optical codes with multi-level encryption in bright or dark field.These results indicate potential applications of Na_(2)Ba_(2)Si_(2)O_(7):-based materials in information encryption and invisible optical storage,and are expected to expand more investigations on optically induced PL modulation behaviors based on mixed valences and defects.
