Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision...Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible substrates in a vertical fashion. Complementary fabrication processes for integrating transferred arrays into flexible devices are also presented and characterized. Robust contacts to transferred silicon wire arrays are demonstrated and shown to be stable under flexing stress down to bending radii of 20 mm. The fabricated devices exhibit a reversible tactile response enabling silicon based, nonpiezoelectric, and flexible tactile sensors. The presented system leads the way towards high-throughput, manufacturable, and scalable fabrication of flexible devices.展开更多
AlGaN-channel high electron mobility transistors(HEMTs)were operated as visible-and solar-blind photodetectors by using GaN nanodots as an optically active floating gate.The effect of the floating gate was large enoug...AlGaN-channel high electron mobility transistors(HEMTs)were operated as visible-and solar-blind photodetectors by using GaN nanodots as an optically active floating gate.The effect of the floating gate was large enough to switch an HEMT from the off-state in the dark to an on-state under illumination.This opto-electronic response achieved responsivity>10^8 A∕W at room temperature while allowing HEMTs to be electrically biased in the offstate for low dark current and low DC power dissipation.The influence of GaN nanodot distance from the HEMT channel on the dynamic range of the photodetector was investigated,along with the responsivity and temporal response of the floating gate HEMT as a function of optical intensity.The absorption threshold was shown to be controlled by the AlN mole fraction of the HEMT channel layer,thus enabling the same device design to be tuned for either visible-or solar-blind detection.展开更多
文摘Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible substrates in a vertical fashion. Complementary fabrication processes for integrating transferred arrays into flexible devices are also presented and characterized. Robust contacts to transferred silicon wire arrays are demonstrated and shown to be stable under flexing stress down to bending radii of 20 mm. The fabricated devices exhibit a reversible tactile response enabling silicon based, nonpiezoelectric, and flexible tactile sensors. The presented system leads the way towards high-throughput, manufacturable, and scalable fabrication of flexible devices.
基金Sandia National LaboratoriesDefense Advanced Research Projects Agency(DARPA)+1 种基金National Technology and Engineering Solutions of SandiaU.S.Department of Energy’s National Nuclear Security Administration(DE-NA-0003525)
文摘AlGaN-channel high electron mobility transistors(HEMTs)were operated as visible-and solar-blind photodetectors by using GaN nanodots as an optically active floating gate.The effect of the floating gate was large enough to switch an HEMT from the off-state in the dark to an on-state under illumination.This opto-electronic response achieved responsivity>10^8 A∕W at room temperature while allowing HEMTs to be electrically biased in the offstate for low dark current and low DC power dissipation.The influence of GaN nanodot distance from the HEMT channel on the dynamic range of the photodetector was investigated,along with the responsivity and temporal response of the floating gate HEMT as a function of optical intensity.The absorption threshold was shown to be controlled by the AlN mole fraction of the HEMT channel layer,thus enabling the same device design to be tuned for either visible-or solar-blind detection.
