A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and fil...A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.展开更多
文摘A macroscopic model of the magnetoresistance effect in fimited anisotropic semiconductors is built. This model allows us to solve the problem of measurement of physical magnetoresistance components of crystals and films. Based on a unified mathematical model the method is worked out enabling us to measure tensor components of the specific electrical resistance and the relative magnetoresistance of anisotropic semiconductors simultaneously.
