Memristor-based architectures hold great potential for future computing systems.However,the reliance on monotonous electrical input to regulate resistance limits the possibilities for high-density storage and multifun...Memristor-based architectures hold great potential for future computing systems.However,the reliance on monotonous electrical input to regulate resistance limits the possibilities for high-density storage and multifunctional integration.In this work,we report a multi-functional memristor based on optical and electrical modulation,utilizing double perovskite oxide materials.La_(2)CoMn_(1-x)Cr_(x)O_(6)(x=0,0.15,0.25,0.35)films were fabricated on a LaNiO_(3)/SiO_(2)/Si conductive heterojunction via the sol-gel method.Among the different Cr doping concentrations,x=0.25(25%Cr)was found to be the optimal condition,enhancing both surface quality and resistive switching(RS)performance in the La_(2)CoMn_(1-x)Cr_(x)O_(6)-based films.For the first time,ten distinct resistance states were achieved in an Au/La_(2)CoMn_(0.75)Cr_(0.25)O_(6)(Cr-LCMO-25)/LaNiO_(3)/SiO_(2)/Si device,driven by varying light intensity(650 nm).These states remained stable for 12,000 s and over 450 cycles,demonstrating excellent multilevel RS memory performance in the Cr-LCMO-25-based device.The RS behavior followed the oxygen vacancy(OV)-controlled space charge-limited current model.Cr doping increased the OV concentration,which in turn enhanced the RS behavior.Additionally,photoinduced carriers at the Au/Cr-LCMO-25 interface modulated the Schottky-like barrier,further influencing the multilevel RS behavior.Importantly,complex logic operations,including AND,OR,NOT,and XNOR,were successfully performed using both electrical and optical inputs.This study offers a promising approach to increase memory density,simplify logic circuits,and create lead-free double perovskite-based multifunctional memristors.展开更多
基金supported by the National Natural Science Foundation of China(Nos.12104106,12464012,12464028,12164005,12074382,11804062,and 11474285)the Natural Science Foundation of Guangxi Zhuang Autonomous Region(No.2021GXNSFAA220044).
文摘Memristor-based architectures hold great potential for future computing systems.However,the reliance on monotonous electrical input to regulate resistance limits the possibilities for high-density storage and multifunctional integration.In this work,we report a multi-functional memristor based on optical and electrical modulation,utilizing double perovskite oxide materials.La_(2)CoMn_(1-x)Cr_(x)O_(6)(x=0,0.15,0.25,0.35)films were fabricated on a LaNiO_(3)/SiO_(2)/Si conductive heterojunction via the sol-gel method.Among the different Cr doping concentrations,x=0.25(25%Cr)was found to be the optimal condition,enhancing both surface quality and resistive switching(RS)performance in the La_(2)CoMn_(1-x)Cr_(x)O_(6)-based films.For the first time,ten distinct resistance states were achieved in an Au/La_(2)CoMn_(0.75)Cr_(0.25)O_(6)(Cr-LCMO-25)/LaNiO_(3)/SiO_(2)/Si device,driven by varying light intensity(650 nm).These states remained stable for 12,000 s and over 450 cycles,demonstrating excellent multilevel RS memory performance in the Cr-LCMO-25-based device.The RS behavior followed the oxygen vacancy(OV)-controlled space charge-limited current model.Cr doping increased the OV concentration,which in turn enhanced the RS behavior.Additionally,photoinduced carriers at the Au/Cr-LCMO-25 interface modulated the Schottky-like barrier,further influencing the multilevel RS behavior.Importantly,complex logic operations,including AND,OR,NOT,and XNOR,were successfully performed using both electrical and optical inputs.This study offers a promising approach to increase memory density,simplify logic circuits,and create lead-free double perovskite-based multifunctional memristors.
