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Atomistic phase transition dynamics of In_(2)Se_(3) semiconductor
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作者 Yufan Zheng Beituo Liu +8 位作者 fengrui sui Rui Ge Yilun Yu Rong Jin Jiawen Dai Shujing Jia Fangyu Yue Ruijuan Qi Junhao Chu 《Nano Research》 2025年第10期1196-1205,共10页
van der Waals(vdW)layered α-In_(2)Se_(3)possesses stable ferroelectricity even down to monolayer,showing great promise in emerging ferroelectric semiconductor non-volatile memory and in-memory computing.Deciphering t... van der Waals(vdW)layered α-In_(2)Se_(3)possesses stable ferroelectricity even down to monolayer,showing great promise in emerging ferroelectric semiconductor non-volatile memory and in-memory computing.Deciphering the atomistic mechanisms governing its complex phase transition occurring in devices,such as thermal budget during fabrication or cycling,is of critical importance for device performance improvement yet remains challenging due to the intricate polymorphism and low interchange barriers.Here,we directly visualize the unique atomic-level in-plane directional phase transition in 2H-αIn_(2)Se_(3)that initiates from the In-Se octahedral framework,and is driven by the migrations of indium ions(in octahedrons)and vacancies(in vdW-gap),revealing a novel intralayer and interlayer indium atoms and vacancies rearrangement pathway.We demonstrate that each In-Se octahedral configuration evolves into two non-layered In-Se tetrahedral frameworks,ultimately coalescing a novel non-layered 6H-type In_(2)Se_(3)phase with the cation sites might be occupied by 1/3 vacancies and 2/3 indium atoms.Our results provide detailed microscopic insights on the phase transition dynamics of the ferroelectric 2H-α In_(2)Se_(3)in response to the thermal stimulus,and may offer guidelines for the precise controlling of specific In_(2)Se_(3)phases and the reliability improvement of ferroelectric In_(2)Se_(3)-based nanodevices. 展开更多
关键词 In_(2)Se_(3) phase transition in-situ electron microscopy atomic-scale dynamics layered semiconductors
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Experimental demonstration of optical activity and phonon chirality in orthorhombic van der Waals group-Ⅳ monochalcogenides
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作者 Rui Ge Yilun Yu +6 位作者 Rong Jin Shuai Yang fengrui sui Beituo Liu Jiawen Dai Ruijuan Qi Fangyu Yue 《Nano Research》 2025年第10期1188-1195,共8页
The chiral behavior of phonons has been verified in achiral van der Waals(vdW)layered hexagonal lattices but lacks of experimental evidences in achiral orthorhombic materials like vdW-layered MX(M=Ge,Sn;X=Se,S).Here,w... The chiral behavior of phonons has been verified in achiral van der Waals(vdW)layered hexagonal lattices but lacks of experimental evidences in achiral orthorhombic materials like vdW-layered MX(M=Ge,Sn;X=Se,S).Here,we choose SnSe as a model anisotropic MX candidate and explore the optical activity with linearly/circularly polarized Raman spectroscopy along the specified crystal axes by combining with spherical aberration-corrected transmission electron microscopy.Interestingly,besides the robust deflection of linearly polarized photons,we observe the inherent circularlike vibration behavior featuring the chirality of phonon in this orthorhombic lattice,which gives a max degree of circular polarization of~80%by referring to the B_(3g) mode of MX.Our findings not only extend chiral phonons to orthorhombic lattices as theoretically predicted for promising applications in polarized optics,spintronics and phonon filters,but also may provide a strategy for exploring the chiral phonons in anisotropic vdWlayered materials. 展开更多
关键词 SnSe van der Waals(vdW)-layered optical anisotropy optical activity chiral phonon
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