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Treatment of constipation-predominant irritable bowel syndrome by focusing on the liver in terms of Traditional Chinese Medicine:a meta-analysis 被引量:3
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作者 Qianwen Li fengbin liu +1 位作者 Zhengkun Hou Di Luo 《Journal of Traditional Chinese Medicine》 SCIE CAS CSCD 2013年第5期562-571,共10页
OBJECTIVE:To assess the efficacy of Traditional Chinese Medicine(TCM)on constipation-predominant irritable bowel syndrome by focusing on the liver.METHODS:Databases(domestic and foreign)were searched with the key word... OBJECTIVE:To assess the efficacy of Traditional Chinese Medicine(TCM)on constipation-predominant irritable bowel syndrome by focusing on the liver.METHODS:Databases(domestic and foreign)were searched with the key words"irritable bowel syndrome","constipation",and"Chinese medicine";the relevant articles were retrieved and evaluated.Cure rate,"remarkable efficacy",recurrence rate and the incidence of adverse reactions were the outcome indicators.Review Manager ver 5.1 was used for this meta-analysis,and funnel plots used to detect publication bias.RESULTS:Nineteen randomized controlled trials were included and 1510 patients involved.The treatment guided byTCM based on the liver was superior to Western Medicine[odds ratio(OR)=2.46,95%confidence interval(CI)1.80,3.35)],cure rate[OR=2.61,95%CI(1.93,3.52)],remarkable efficacy[OR=2.68,95%CI(1.82,3.95)],recurrence rate[OR=0.19,95%CI(0.12,0.29)]and the incidence of adverse reactions[OR=0.24,95%CI(0.09,0.65)].However,funnel plots showed publication bias.CONCLUSION:Compared with Western Medicine,the treatment of IBS-C based on the liver is significantly better but the results must be treated with caution because publication bias was recorded. 展开更多
关键词 Meta-analysis Medicine Chinese traditional Constipation Irritable bowel syndrome Randomized controlled trial
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调制周期对TaN/TiSiN纳米多层膜微观结构与性能影响 被引量:4
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作者 阎红娟 田沁叶 +2 位作者 刘峰斌 司丽娜 张淑婷 《热喷涂技术》 2019年第4期25-30,共6页
使用磁控溅射仪沉积一系列不同调制周期的TaN/TiSiN纳米多层膜。采用X射线衍射仪(XRD)、显微硬度计、摩擦磨损试验机分析与表征纳米多层膜微观结构和性能,研究调制周期对TaN/TiSiN纳米多层膜的微观结构、力学性能和摩擦学性能的影响。... 使用磁控溅射仪沉积一系列不同调制周期的TaN/TiSiN纳米多层膜。采用X射线衍射仪(XRD)、显微硬度计、摩擦磨损试验机分析与表征纳米多层膜微观结构和性能,研究调制周期对TaN/TiSiN纳米多层膜的微观结构、力学性能和摩擦学性能的影响。结果表明,TaN/TiSiN纳米多层膜均为面心立方结构,在(111)晶面和(200)晶面呈现择优取向。当调制周期为25nm时,TaN/TiSiN纳米多层膜硬度最大值为30.9GPa,摩擦系数与磨损量最小。TaN/TiSiN纳米多层膜的位错穿过TaN层与TiSiN层界面时将受到多层膜界面对其施加的镜像力作用,阻碍位错的运动,引起薄膜的强化。 展开更多
关键词 TaN/TiSiN 共格外延生长 硬度 耐磨性
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Device performance limit of monolayer SnSe_(2) MOSFET 被引量:2
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作者 Hong Li Jiakun Liang +5 位作者 Qida Wang fengbin liu Gang Zhou Tao Qing Shaohua Zhang Jing Lu 《Nano Research》 SCIE EI CSCD 2022年第3期2522-2530,共9页
Two-dimensional(2D)semiconductors are attractive channels to shrink the scale of field-effect transistors(FETs),and among which the anisotropic one is more advantageous for a higher on-state current(I_(on)).Monolayer(... Two-dimensional(2D)semiconductors are attractive channels to shrink the scale of field-effect transistors(FETs),and among which the anisotropic one is more advantageous for a higher on-state current(I_(on)).Monolayer(ML)SnSe_(2),as an abundant,economic,nontoxic,and stable two-dimensional material,possesses an anisotropic electronic nature.Herein,we study the device performances of the ML SnSe_(2) metal-oxide-semiconductor FETs(MOSFETs)and deduce their performance limit to an ultrashort gate length(L_(g))and ultralow supply voltage(V_(dd))by using the ab initio quantum transport simulation.An ultrahigh I_(on) of 5,660 and 3,145µA/µm is acquired for the n-type 10-nm-L_(g) ML SnSe_(2) MOSFET at V_(dd)=0.7 V for high-performance(HP)and low-power(LP)applications,respectively.Specifically,until L_(g) scales down to 2 and 3 nm,the MOSFETs(at V_(dd)=0.65 V)surpass I_(on),intrinsic delay time(τ),and power-delay product(PDP)of the International Roadmap for Device and Systems(IRDS,2020 version)for HP and LP devices for the year 2028.Moreover,the 5-nm-L_(g) ML SnSe_(2) MOSFET(at V_(dd)=0.4 V)fulfills the IRDS HP device and the 7-nm-L_(g) MOSFET(at V_(dd)=0.55 V)fulfills the IRDS LP device for the year 2034. 展开更多
关键词 monolayer(ML)SnSe_(2) ANISOTROPIC metal-oxide-semiconductor field-effect transistor(MOSFET) device performance limit ab initio transport simulation
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