Halide perovskites with naturally coupled electron-ion dynamics hold greatpotential for nonvolatile memory applications. Self-rectifying memristors arepromising as they can avoid sneak currents and simplify device con...Halide perovskites with naturally coupled electron-ion dynamics hold greatpotential for nonvolatile memory applications. Self-rectifying memristors arepromising as they can avoid sneak currents and simplify device configuration.Here we report a self-rectifying memristor firstly achieved in a single perovskite(NH CINH_(3))_(3)PbI_(5) (abbreviated as (IFA)_(3)PbI_(5)), which is sandwiched byAg and ITO electrodes as the simplest cell in a crossbar array device configuration.The iodide ions of (IFA)_(3)PbI_(5) can be easily activated, of which the migrationin the bulk contributes to the resistance hysteresis and the reaction withAg at the interface contributes to the spontaneous formation of AgI. The perfectcombination of n-type AgI and p-type (IFA)_(3)PbI_(5) gives rise to the rectificationfunction like a p–n diode. Such a self-rectifying memristor exhibits therecord-low set power consumption and voltage. This work emphasizes that themultifunction of ions in perovskites can simplify the fabrication procedure,decrease the programming power, and increase the integration density offuture memory devices.展开更多
基金National Key Research and Development Program of China,Grant/Award Numbers:2020YFA0308900,2022YFB3602801National Natural Science Foundation of China,Grant/Award Numbers:52373290,62288102。
文摘Halide perovskites with naturally coupled electron-ion dynamics hold greatpotential for nonvolatile memory applications. Self-rectifying memristors arepromising as they can avoid sneak currents and simplify device configuration.Here we report a self-rectifying memristor firstly achieved in a single perovskite(NH CINH_(3))_(3)PbI_(5) (abbreviated as (IFA)_(3)PbI_(5)), which is sandwiched byAg and ITO electrodes as the simplest cell in a crossbar array device configuration.The iodide ions of (IFA)_(3)PbI_(5) can be easily activated, of which the migrationin the bulk contributes to the resistance hysteresis and the reaction withAg at the interface contributes to the spontaneous formation of AgI. The perfectcombination of n-type AgI and p-type (IFA)_(3)PbI_(5) gives rise to the rectificationfunction like a p–n diode. Such a self-rectifying memristor exhibits therecord-low set power consumption and voltage. This work emphasizes that themultifunction of ions in perovskites can simplify the fabrication procedure,decrease the programming power, and increase the integration density offuture memory devices.
