Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in impr...Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.展开更多
基金financially supported in part by Shenzhen Municipal Research Program(Grant NO.SGDX20211123145404006)in part by National Natural Science Foundation of China(Grant NO.62274111)+1 种基金in part by Guangdong Basic and Applied Basic Research Foundation(Grant NO.2021A1515011858)in part by Innovation and Technology Fund of Hong Kong(Grant NO.GHP/018/21SZ)。
文摘Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.
