Stents made of nearly equiatomic NiTi alloy are used to treat malignant obstruction caused by cancer,but prevention of re-obstruction after surgery is still a challenge because the bare stents possess poor anticancer ...Stents made of nearly equiatomic NiTi alloy are used to treat malignant obstruction caused by cancer,but prevention of re-obstruction after surgery is still a challenge because the bare stents possess poor anticancer and antibacterial properties to inhibit cancer/bacteria invasion.The present work aims at endowing the NiTi alloy with anticancer and antibacterial abilities by surface modification.Ni–Ti–O nanoporous layers with different thicknesses were prepared on NiTi by anodization,and biological experiments were conducted to evaluate the effects on gram-positive Staphylococcus aureus,human lung epithelial cancer cells(A549),as well as human endothelial cells(EA.hy926).The nanoporous layer with a thickness of 10.1 lm inhibits growth of cancer cells and kill bacteria but shows little adverse effects on normal cells.Such selectivity is related to the larger amount of Ni ions leached from the sample in the acidic microenvironment of cancer cells in comparison with normal cells.The Ni–Ti–O nanoporous layers are promising as coatings on NiTi stents to prevent re-obstruction after surgery.展开更多
Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, st...Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investi- gated. The appearance of electrical resistivity shows their semiconducing properties. In most of the visible light band, all the AZO films present transparency of more than 80 %. A1 doping suppresses the AZO film crystallization. When the A1 doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. A1 doping improves the roughness of i-ZnO film. The root mean square （RMS） roughness of samples prepared by ALD is much smaller than that pre- pared by radio-frequency magnetron sputtering reported.展开更多
Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical...Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure（OPP） during the RF sputtering process.Scanning electron microscope（SEM） and X-ray diffraction（XRD） test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors（TFTs） with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.展开更多
基金This study was financially supported by the Fund for Shanxi"1331 Project"Key Innovative Research Team(No.PY201809)the Natural Science Foundation of Shanxi Province(No.201801D121093)Hong Kong Research Grants Council General Research Funds(No.CityU 11205617).
文摘Stents made of nearly equiatomic NiTi alloy are used to treat malignant obstruction caused by cancer,but prevention of re-obstruction after surgery is still a challenge because the bare stents possess poor anticancer and antibacterial properties to inhibit cancer/bacteria invasion.The present work aims at endowing the NiTi alloy with anticancer and antibacterial abilities by surface modification.Ni–Ti–O nanoporous layers with different thicknesses were prepared on NiTi by anodization,and biological experiments were conducted to evaluate the effects on gram-positive Staphylococcus aureus,human lung epithelial cancer cells(A549),as well as human endothelial cells(EA.hy926).The nanoporous layer with a thickness of 10.1 lm inhibits growth of cancer cells and kill bacteria but shows little adverse effects on normal cells.Such selectivity is related to the larger amount of Ni ions leached from the sample in the acidic microenvironment of cancer cells in comparison with normal cells.The Ni–Ti–O nanoporous layers are promising as coatings on NiTi stents to prevent re-obstruction after surgery.
基金financially supported by the National Basic Research Program of China(No.2011CBA00600)the National Natural Science Foundation of China(No.61275025)
文摘Various aluminum-doped zinc oxide （AZO） films were prepared on Si substrate by atomic layer de- position （ALD） at 100 ℃. The effect of the composition of AZO films on their electrical, optical characteristics, structural property and surface topography was investi- gated. The appearance of electrical resistivity shows their semiconducing properties. In most of the visible light band, all the AZO films present transparency of more than 80 %. A1 doping suppresses the AZO film crystallization. When the A1 doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. A1 doping improves the roughness of i-ZnO film. The root mean square （RMS） roughness of samples prepared by ALD is much smaller than that pre- pared by radio-frequency magnetron sputtering reported.
基金financially supported by the National Basic Research Program of China (No.2011CBA00600)the National Natural Science Foundation of China (No.61275025)
文摘Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure（OPP） during the RF sputtering process.Scanning electron microscope（SEM） and X-ray diffraction（XRD） test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors（TFTs） with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.
